Lg Electronics Inc.

Samsung Electronics Co., Ltd.

Sung Il Cho

Jin Hae Choi

Gu Ang Jang

Ji Young Hong

Kyung In Yang

Hyuk Kim

Edward Sung

Daehyun Jang

Dae Hyun Jang

Jin Young Bang

Seung Pil Chung

A showerhead according to an embodiment of the present inventive concept includes an upper plate including a plurality of gas supply passages, a lower plate including a plurality of supply holes and a plurality of exhaust slots formed in a lower surface, and a plurality of partition walls between the upper plate and the lower plate, connected to a plurality of exhaust slots and defining exhaust passages that are open at a side portion of the showerhead.

Showerhead and substrate processing apparatus

Shrouds and substrate treating systems including the same are provided. Substrate treating systems may include a process chamber, a supporter, and a plasma source that is spaced apart from the supporter in a vertical direction. The substrate treating systems may also include a shroud configured to contain the plasma therein. The shroud may include a sidewall portion and a first flange portion extending horizontally from the sidewall portion and including a plurality of first slits that extend through a thickness of the first flange portion. The first flange portion may define a first opening, and a portion of the supporter may extend through the first opening. The sidewall portion may include a plurality of second slits, and each of the plurality of second slits may extend through a thickness of the sidewall portion and may extend from one of the plurality of first slits toward the plasma source.

Shrouds and substrate treating systems including the same

A vertical memory device and a method of manufacturing such device are provided. The vertical memory device may include a plurality of gate electrode layers stacked in a cell region of a semiconductor substrate; a plurality of upper isolation insulating layers dividing an uppermost gate electrode layer among the plurality of gate electrode layers, extending in a first direction; a plurality of vertical holes arranged to have any two adjacent vertical holes to have a uniform distance from each other throughout the cell region and including a plurality of channel holes penetrating through the plurality of gate electrode layers disposed between the plurality of upper isolation insulating layers and a plurality of first support holes penetrating through the plurality of upper insulating layers; a plurality of channel structures disposed in the plurality of channel holes; and a plurality of first support structures disposed in the plurality of first support holes.

Growing community of inventors

Seoul, South Korea

Sung Il Cho