Samsung Electronics Co., Ltd.

Sung-hyun Sim

Yong-il Kim

Ha-nul Yoo

Wan-tae Lim

Cheol-soo Sone

Kyung-wook Hwang

Nam-goo Cha

Hye-seok Noh

Geun-woo Ko

Hun-jae Chung

Sung-Won Hwang

Sung Su Kim

Jin-sub Lee

Jung-sub Kim

Jin-hyun Lee

Ji-hye Yeon

Han-Kyu Seong

Jung-Sub Kim

Geun-Woo Ko

Sung-won Hwang

Hyung-duk Ko

Suk-ho Choi

A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.

Light-emitting diode (LED), LED package and apparatus including the same

A light-emitting diode (LED) device includes a plurality of light-emitting structures spaced apart from each other; a plurality of electrode layers on first surfaces of the plurality of light-emitting structures, respectively; a protection layer on second surfaces of each of the plurality of light-emitting structures, respectively; a separation layer to electrically insulate the plurality of light-emitting structures from each other and electrically insulate the plurality of electrode layers from each other; a plurality of phosphor layers on second surfaces of the plurality of light-emitting structures, respectively, each of the plurality of the phosphor layers each to output a different color of light; and a partitioning layer between the phosphor layers and separating the plurality of phosphor layers from each other, the partitioning layer including a substrate structure, an insulation structure, or a metal structure.

Light-emitting diode (LED) device for realizing multi-colors

A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.

Graphene light-emitting device and method of manufacturing the same

A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.

Semiconductor light-emitting devices including contact layers to form reflective electrodes

An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance.

Light-emitting diode for emitting ultraviolet light

Growing community of inventors

Uiwang-si, South Korea

Sung-hyun Sim