Samsung Electronics Co., Ltd.

Sung-Hyun Kwon

Jae-Hwang Sim

Joo-Young Kim

Sang-Yong Park

Keon-Soo Kim

Jae-Kwan Park

Dong-hwa Kwak

A method of forming a semiconductor device is provided. A plurality of first guide patterns are formed on a substrate. A mask layer is conformally formed on the substrate. Second guide patterns are formed in empty regions on respective sides of the first guide patterns. The mask layer is planarized and the first and second guide patterns are removed. The mask layer is etched by an anisotropic etching process.

Methods of forming a semiconductor device

A method for fabricating a semiconductor device having fine contact holes is exemplarily disclosed. The method includes forming an isolation layer defining active regions on a semiconductor substrate. An interlayer dielectric layer is formed on the semiconductor substrate having the isolation layer. First molding patterns are formed on the interlayer dielectric layer. Second molding patterns positioned between the first molding patterns and spaced apart therefrom are also formed. A mask pattern surrounding sidewalls of the first and second molding patterns is formed. Openings are formed by removing the first and second molding patterns. Contact holes are formed by etching the interlayer dielectric layer using the mask pattern as an etching mask.

Method of fabricating semiconductor device having fine contact holes

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Seoul, South Korea

Sung-Hyun Kwon