Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Samsung Led Co., Ltd.

Sung Hwan Jang

Masayoshi Koike

Soo Min Lee

Min Gyu Kim

Cheol Kyu Kim

Kyeong Ik Min

Seong Suk Lee

Jaeun Yoo

Cheol Soo Sone

Rak Jun Choi

Woong-ki Lee

Hun Jae Chung

Hyo Won Suh

A display apparatus includes a color selector configured to select a preferred color corresponding to at least one among a main target and a sub-target determined in an image based on color distribution; a color converter configured to perform color conversion by setting a degree of color conversion of at least one among the main target and the sub-target and converting a color of the at least one among the main target and the sub-target in the image based on the set degree of color conversion; and a controller configured to display the color-converted image via a display panel.

Display apparatus and method of controlling the same

There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of InGaN layers (0&#x3c;x&#x3c;1) and at least one AlGaN layer (0&#x2266;y&#x3c;1), and the AlGaN layer is stacked between the InGaN layers.

Nitride semiconductor light emitting device

An apparatus and method for detecting a communication abnormality in a multi-type air conditioner is disclosed. The apparatus, which performs data communication with peripheral devices having an outdoor unit, a plurality of indoor units, a repeater and a wired remote controller, includes a level converter for serving as an interface to allow multiplex communication between the apparatus and the peripheral devices; and an abnormality detector connectable with the peripheral devices from a remote site through the level converter, the abnormality detector detecting a communication abnormality in the peripheral devices by automatically changing an operation mode thereof into a slave or master mode depending on whether an operation mode of each of the peripheral devices connected thereto is the master or slave mode. Thus, when the communication abnormality occurs, the communication abnormality can be detected in a convenient way by using the apparatus.

Apparatus and method for detecting a communication abnormality in a multi-type air conditioner

In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device

Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

Nitride based semiconductor device using nanorods and process for preparing the same

Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

A method of growing a non-polar m-plane nitride semiconductor. A (11-23) plane sapphire substrate is prepared, and a non-polar (10-10) nitride semiconductor is grown on the sapphire substrate. The present invention can also be applied to a method for manufacturing other m-plane hexagonal semiconductors.

Growing community of inventors

Kyungki-do, South Korea

Sung Hwan Jang