Skhynix Inc.

Sung-Hwan Ahn

Tae-Hang Ahn

Oh-Hyun Kim

Hae-Jung Park

A method for fabricating a semiconductor device includes: preparing a substrate; forming an isolation layer defining an active region in the substrate; forming a first insulation structure over the substrate, the first insulation structure defining a line-type opening that exposes the isolation layer and the active region; forming a plug pad through a Selective Epitaxial Growth (SEG) process over the exposed active regions; forming a second insulation structure inside the line-type opening, the second insulation structure defining a contact hole landing on the plug pad; and filling the contact hole with a contact plug.

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Gyeonggi-do, South Korea

Sung-Hwan Ahn