Taiwan Semiconductor Manufacturing Comp. Ltd.

Sung-Hsun Wu

Ming-Hsi Yeh

Syun-Ming Jang Jang

Chao-Cheng Chen

Huan-Just Lin

Jr-Jung Lin

Chi-Kang Liu

Bo-Wei Chou

To pattern a gate electrode, a mandrel of material is initially deposited and then patterned. In an embodiment the patterning is performed by performing a first etching process and to obtain a rough target and then to perform a second etching process with different etch parameters to obtain a precise target. The mandrel is then used to form spacers which can then be used to form masks to pattern the gate electrode.

Semiconductor methods and devices

A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a first mixture of ozone and one of an acid and a base, followed by a second mixture of ozone and the other one of the acid and the base. The cleaning mixtures may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface. The acid may be HF; the base may be NHOH.

Cleaning method for semiconductor device fabrication

Growing community of inventors

Kaohsiung, Taiwan

Sung-Hsun Wu