Skhynix Inc.

Other

Sung Hoon Lee

Dong Hun Lee

Ki Hong Lee

Dong Sun Sheen

Jung Shik Jang

Jung Dal Choi

Jin Kook Kim

Sung Yong Chung

Se Young Oh

Hiroyuki Kanaya

Jin Young Lee

Dong Jun Kim

Lee Kyoung Kwon

Hae Kwang Lee

Byung Ryol Paik

The present technology includes a semiconductor memory device. The semiconductor memory device includes a first channel pattern and a second channel pattern each extending in a vertical direction and facing each other, a channel separation pattern formed between the first channel pattern and the second channel pattern and extending in the vertical direction, a stack including conductive patterns each surrounding the first channel pattern, the second channel pattern, and the channel separation pattern and stacked apart from each other in the vertical direction, a first memory pattern disposed between each of the conductive patterns and the first channel pattern, and a second memory pattern disposed between each of the conductive patterns and the second channel pattern.

Semiconductor memory device

According to one embodiment, a magnetic memory includes a cell transistor including a first source/drain diffusion layer and a second source/drain diffusion layer, a first contact on the first source/drain diffusion layer, a memory element on the first contact, and a second contact on the second source/drain diffusion layer, the second contact including a first plug on the second source/drain diffusion layer, and a second plug on the first plug.

Magnetic memory and manufacturing method thereof

Growing community of inventors

Icheon-si, South Korea

Sung Hoon Lee