Samsung Electronics Co., Ltd.

Seagate Technology International

Seagate Technology Incorporated

Sung-hoon Choa

Jin-Seung Sohn

Chee-kheng Lim

Seung-bum Hong

In-sang Song

Hyoung-soo Ko

Eun-Hyoung Cho

Hae-sung Kim

Yun-kwon Park

Kee-won Kim

Young-jin Cho

In-Jun Hwang

Jong-Seok Kim

Duck-hwan Kim

Sang-Wook Kwon

Jong-seok Kim

Kwang-seok Kim

Sung-Chul Lee

Young-tack Hong

Hoo-san Lee

Hoon-sang Oh

Du-hyun Lee

Chul-woo Lee

Woon-bae Kim

Seung-Jun Lee

Sung-chul Lee

Ju-Hwan Jung

Min-seog Choi

Soon-kyo Hong

Yong-kwan Kim

In-Kyeong Yoo

Seung-tae Jung

Yong Kwan Kim

Yong-su Kim

Sung-Dong Suh

Eun-Joo Jang

Kuang-woo Nam

Eun-sik Kim

Seok-chul Yun

Shin-Ae Jun

Hyung-soon Shin

Simon Buehlmann

Dong-ki Min

Hyun-jei Kim

Min-Pyo Hong

A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

Apparatus comprising substrate and conductive layer

A data storage device using magnetic domain wall motion may include a first magnetic layer having a plurality of magnetic domains. A second magnetic layer may be connected to the first magnetic layer, and a connection layer may be disposed between the first and second magnetic layers. A resistive magnetic layer may be disposed between each of the first and second magnetic layers and the connection layer. Accordingly, when current is supplied to the data storage device to move a magnetic domain wall, the leakage of current in a connection between the magnetic layers may be reduced or prevented, thus conserving power.

Data storage device having magnetic domain wall motion and method of forming the same

Provided is a multi-stack memory device that includes a storage unit group including a plurality of storage units that are vertically stacked and form a plurality of storage unit rows, and a plurality of transistors connected to the storage unit group, wherein the transistors that are connected to the storage units which are included in at least two rows of the plurality of the storage unit rows and are connected by a common wire. The common wire may be a gate line or a bit line.

Multi-stack memory device

Conductive layer including implanted metal ions

An information storage device using movement of magnetic domain walls includes a writing magnetic layer having a magnetic domain wall. A stack structure is formed on the writing magnetic layer. The stack structure includes a connecting magnetic layer and an information storing magnetic layer stacked sequentially. The information storage device also includes a reader for reading information stored in the information storing magnetic layer.

Information storage devices using movement of magnetic domain walls and methods of manufacturing the same

A ferroelectric hard disk device is provided and includes: a ferroelectric media having a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head formed above the ferroelectric media, the head being operative to write and reproduce information on the ferroelectric layer.

Ferroelectric hard disk system

Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.

Information storage medium using nanocrystal particles, method of manufacturing the information storage medium, and information storage apparatus including the information storage medium

Nano imprint master and method of manufacturing the same

Provided are an information storage device using movement of a magnetic domain wall, and methods of manufacturing and operating the information storage device. The information storage device includes a storage track having magnetic domains and a writer for recording data to the storage track, wherein the writer comprises: a first magnetic layer and a second magnetic layer that is formed to cover a portion of the first magnetic layer and has a smaller magnetic anisotropic energy than the first magnetic layer.

Information storage device using movement of magnetic domain wall, and methods of manufacturing and operating the information storage device

A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.

Silicon-based RF system and method of manufacturing the same

Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer which has a plurality of magnetic domains, a current applying unit which applies current for a magnetic domain wall movement to the magnetic layer, and a head for reading and writing, wherein the magnetic layer comprises a plurality of perpendicular magnetic layers formed on a substrate in a plurality of rows and columns, and a horizontal magnetic layer formed on the perpendicular magnetic layers to connect the perpendicular magnetic layers.

Data storage device using magnetic domain wall movement and method of operating the same

Provided are a data storage device using magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a first magnetic layer for writing data having two magnetic domains magnetized in opposite directions to each other and a second magnetic layer for storing data formed on at least one side of the first magnetic layer. The data storage device may further include a data recording device connected to both ends of the first magnetic layer and the end of the second magnetic layer which is not adjacent to the first magnetic layer, a read head formed a predetermined distance from the end of the second magnetic layer which is not adjacent to the first magnetic layer, and a current detector connected to the read head and the data recording device.

A metallic wave guide and a light delivery module are provided. The metallic waveguide includes a metal body formed of a conductive metal and having an aperture formed therethrough, the aperture having input and output ends. The aperture has a bent portion for changing a light traveling direction between the input and output ends, and a tapered portion between the bent portion and the output end. The tapered portion has a width that is gradually reduced toward the output end, and the aperture is formed in a C-shape by a ridge formed on an inner surface of the metal body.

90&#xb0;-bent metallic waveguide having tapered c-shaped aperture, method of fabricating the waveguide, light delivery module including the waveguide, and heat assisted magnetic recording head having the waveguide

Growing community of inventors

Seoul, South Korea

Sung-hoon Choa