Skhynix Inc.

Dongwoo Fine-chem Co., Ltd.

Hyundai Motor Company

Doosan Infracore Co., Ltd.

Kia Motors Corporation

Doosan Machine Tools Co., Ltd.

Sung Hoon Cho

Sang Kook Kim

Seung June Park

Seong Hwan Park

Gil Bok Choi

Min Sang Park

Se Kyoung Choi

Jae Sung Sim

Dae Seung Kim

Han Soo Joo

Yun Bong Lee

Suk Kwang Park

Seung Woo Kim

Hee Chang Chae

Dong Hwan Kim

Dong Wook Lee

Hwang Huh

Sung Ho Kim

Yong Dok An

Myung Su Kim

Min Hyuk Park

Kyong Taek Lee

Myoung Kwan Cho

Sang Jo Lee

Kyung Hoon Wie

Chang Jin Sunwoo

Ji Eun Yi

Seong Wook Seo

Hyungsub Lim

Hyung Jung Kim

Min Ju Lim

Provided herein may be a semiconductor memory device and a method of operating the semiconductor memory device. The semiconductor memory device may include: a memory block including upper pages, a center page, and lower pages; a peripheral circuit configured to perform a read operation on the memory block; and a control logic configured to control the peripheral circuit to perform the read operation and control the peripheral circuit such that, during the read operation, based on a location of a selected page among the plurality of pages, a pass voltage to be applied to first adjacent pages disposed adjacent to the selected page in a first direction differs from a pass voltage to be applied to second adjacent pages disposed adjacent to the selected page in a second direction.

Semiconductor memory device and method of operating the semiconductor memory device

Provided herein may be a memory device and a method of operating the same. The memory device may include a plurality of cell strings, a peripheral circuit, and control logic. Each of the cell strings includes a drain select transistor, a source select transistor, and a plurality of memory cells that are coupled in series between the drain select transistor and the source select transistor. The peripheral circuit may be configured to perform a program operation and a program verify operation on a cell string that is selected from among the plurality of cell strings. The control logic may be configured to control the peripheral circuit to boost a channel voltage of at least one unselected cell string, among the plurality of cell strings, based on a comparison between a degree of progress of the program operation and a reference degree of progress during the program verify operation.

Memory device for performing program verify operation and method of operating the same

The present invention relates to a flexible color filter. More specifically, the present invention is characterized in that a separation layer, a protective layer, a black matrix layer and a pixel layer are sequentially laminated, wherein the protective layer comprises one or more polymers selected from polymers represented by chemical formula 1 or chemical formula 2.

Flexible color filter

A film touch sensor includes a separation layer, a protective layer disposed on the separation layer, and an electrode pattern layer which is disposed on the protective layer and includes an insulation layer formed by curing an insulation layer forming composition comprising a polymer having a repeating unit represented by Formula 1 or 2, such that it is possible to suppress thermal damage which may occur in high-temperature deposition and annealing processes, and significantly reduce an occurrence rate of cracks during peeling-off the same from a carrier substrate.

Film touch sensor and method for fabricating the same

A film touch sensor includes a separation layer, a protective layer which is disposed on the separation layer and is a cured layer of a polymer having a repeating unit represented by Formula 1 or 2, and an electrode pattern layer disposed on the protective layer, such that it is possible to suppress thermal damage such as wrinkles, or cracks of an protective layer, which may occur in high-temperature deposition and annealing processes, and significantly reduce an occurrence rate of cracks during peeling-off the same from a carrier substrate.

A film touch sensor includes a separation layer; a protective layer disposed on the separation layer, and an electrode pattern layer which is disposed on the protective layer and includes an insulation layer that is a cured layer of a binder resin including (a-1) a resin in which at least a part of a phenolic hydroxyl group or a carboxyl group is protected with an acid decomposable group, (a-2) an acrylic resin containing an epoxy group, and (a-3) an acrylic resin containing an oxetane group, such that it is possible to suppress thermal damage such as wrinkles, or cracks of the insulation layer, which may occur in high-temperature deposition and annealing processes, and significantly reduce an occurrence rate of cracks during peeling-off the same from a carrier substrate.

A film touch sensor includes a separation layer, a first protection layer on the separation layer, and an electrode pattern layer on the first protection layer. An alkoxy group having 1 to 5 carbon atoms from the separation layer, and at least one substituent group of a hydroxyl group, a carboxyl group or an amide group from the first protection layer are reacted with each other to form a chemical bond between the separation layer and the first protection layer. Thus, electrode damages and cracks are prevented during a detaching process from a carrier substrate to improve flexibility and durability of the film touch sensor.

Film touch sensor and touch screen panel including the same

A touch sensor includes a plurality of electrode patterns, an optical adjusting layer interposed between the electrode patterns, and an insulation layer at least partially covering the electrode patterns and the optical adjusting layer. The insulation layer may have a refractive index less than that of the optical adjusting layer.

Touch sensor and method of manufacturing the same

Display screen with graphical user interface for machine tool

A semiconductor memory device may include a control logic. The control logic may be coupled to bit lines through a read and write (read/write) circuit and to word lines. The control logic is configured to determine a duration of an activation time of a strobe signal for the read/write circuit.

Semiconductor memory device and operation method thereof

A vehicle roof includes a roof panel part made of a Carbon Fiber Reinforced Plastics (CFRP) material; and a plurality of center roof rail parts made of the CFRP material and bonded to the roof panel part to each other in a diagonal direction, thereby reducing a weight and increasing a stiffness of the vehicle roof.

Vehicle roof

The present disclosure memory includes a controller for a semiconductor memory device, the device including a memory cell array including a plurality of pages. The controller includes a memory control module suitable for translating a logical address for data provided from a host to a physical address representing one of the plurality of pages, and determining one of a plurality of operation modes based on the physical address and pre-stored parity-related information. The controller further includes and an error correction code circuit suitable for generating parity-data for the data provided from the host according to the determined operation mode.

Memory device with different parity regions

The present disclosure relates to a method for managing turret tools for a machine tool, and more particularly, by setting tool information and changing a mounting location of the tool, which is to be mounted or has been mounted, by using visual information about a turret mounted in the machine tool and the tool mounted in the turret, a user may intuitively check information about a tool mounted on the turret and to easily set tool installation information which needs to be set when mounting and detaching the tool, changing a location of the tool, or installing the tool in a machine tool.

Method for managing turret tools by using visual information for machine tool

A structure for fastening a stiffening bar includes a floor panel covering a bottom side of a vehicle body. A sub-frame is mounted on the floor panel and extends in a width direction of the vehicle body. A pair of center side members are mounted to the sub-frame and extend longitudinally at both sides of the bottom side of the vehicle body. A pair of rear side members extend longitudinally below the pair of center side members. The stiffening bar is mounted to the pair of rear side members so that a bottom side of the stiffening bar is higher than bottom sides of the pair of rear side members.

Growing community of inventors

Gyeonggi-do, South Korea

Sung Hoon Cho