Skhynix Inc.

Snu Rdb Foundation

Lg Electronics Inc.

Hynix Semiconductor Inc.

Korea Research Institute of Chemical Technology

Agency for Defense Development

Sung Hoon Ahn

Sung Hyuk Song

Kyosoon Chae

In Gon Yang

Choongho Lim

Keun Joo Kim

Gil Yong Lee

Min Woo Han

Hyung Jung Kim

Ki Young Kim

Min Su Kim

Ji Hwan Kim

Duck Ju Kim

Seong Jin Park

Jae Chul Lee

Kwang Ho Baek

Jae Won Cha

Sang Dal Rhee

Won Hoon Jung

Young Don Jung

Jung Mi Ko

Min Sik Kim

Jin Hee Ahn

Seung Kyu Kang

Myung Ae Bae

Kyung Tae Lee

Nam Sook Kang

Jin Woo Oh

Tae Ho Jeon

Ji Soo Kim

Renzhe Wu

Hee Youn Kim

Woo Kyun Jung

Hye Sung Lee

Jun Yan

Yeon June Kang

The present disclosure relates to a method of controlling a garment folding machine having a plurality of folding layers configured to perform a function of folding a garment or a function of conveying the garment using at least one conveyor, and the method includes a wrinkle removing step of operating a conveyor motor to allow the conveyor to drop one end of the garment from the conveyor, thereby removing wrinkles of the garment using a weight of the garment.

Garment folding machine and method of controlling the same

Provided is a hybrid drive device including a main power source; an auxiliary power source; a main deformation part configured to be deformable in response to receiving a voltage from the main power source; and an auxiliary deformation part configured to connect to the main deformation part and to be deformable in response to receiving a voltage from the auxiliary power source.

Hybrid drive device

The present disclosure relates to a method of controlling a garment folding machine, which may effectively prevent damage to a drive motor and a loss of power caused by an overload of the drive motor by accurately detecting and determining a situation in which garments are lumped during a process of conveying or folding the garments, may effectively prevent damage to the lumped garments and related components, and may significantly reduce the time for which the operation of the folding machine is stopped by accurately specifying the position at which the garments are lumped and then notifying a user of the position to allow the user to take an immediate action.

Method of controlling garment folding machine

The present disclosure relates to a garment folding machine and a method of controlling the garment folding machine, in which it is possible to effectively prevent damage to a garment by controlling and reducing tension after detecting and determining a situation in which the tension is applied to the garment during a process of conveying or folding the garment, and it is possible to allow the folding machine to smoothly perform vertical folding by disposing the garment at an appropriate position in order to perform the vertical folding.

Garment folding machine and method of controlling same

A semiconductor memory device operates by applying a program pulse to a selected word line, updating a program pulse count value, determining a current sensing mode based upon the program pulse count value, and performing a program verify operation based upon the current sensing mode. The current sensing mode is determined by determining one of an individual state current sensing operation for determining verify pass or fail for one target program state and an all-state current sensing operation for determining verify pass or fail for all target program states.

Semiconductor memory device and operating method thereof

Disclosed is a loop linked smart morphing actuator. The actuator includes a first area morphed in a first pattern and a second area morphed in a second pattern according to an external signal. The first area includes a first unit cell morphed in a first direction. The second area includes a second unit cell morphed in a second direction. The first unit cell and the second unit cell may be configured in a loop type knit structure. The second direction is opposite to the first direction, the second pattern is a pattern which has a symmetrical relationship with the first pattern and is provided opposite to the first pattern. In regard to a structure or a shape, provided is an actuator including a knit structure for realizing various driving forms which cannot be predicted through predetermined first and second patterns or a simple combination thereof.

Loop linked smart morphing actuator

Disclosed is a high speed actuator. The high speed actuator includes an actuation part configured to cause deformation such as bending or twisting and an active stiffness controller on a surface of the actuation part or in the actuation part configured to control in real time a stiffness (e.g., of the actuator) according to an external signal. The active stiffness controller may control a stiffness of the high speed actuator in order for the actuator to be actuated at a high speed. Moreover, since the stiffness of the actuator is controlled in real time, a speed of the actuator may be controlled in real time.

High speed actuator including active stiffness controller and method of driving the same

Disclosed is a smart soft composite actuator which enables user-desiring deformation by changing the position of smart material functioning as an active component, wherein the smart soft composite actuator comprises a smart material whose shape is changeable based on an external signal; and a matrix for supporting the smart material and determining an external shape, wherein the smart material is positioned inside the matrix or in a surface of the matrix, and at least one of in-plane shear deformation and out-of-plane deformation is realized by controlling the position of smart material.

Smart soft composite actuator

A semiconductor memory device is disclosed. The semiconductor memory device includes a current mirror configured to include a current mirror section for current of a first line to a second line and transistors coupled in parallel, a detector configured to control a voltage of the first line based on voltages of sensing nodes, a fail bit set section configured to control a voltage of the second line, and a comparator configured to compare the voltage of the first line with the voltage of the second line and generate a pass and fail check signal based on the comparing result.

Semiconductor memory device using a current mirror

Disclosed is an underwater robot based on flapping comprising: an actuator including a smart material and directional material, wherein the smart material is changed in its shape according to an external signal, and the directional material restricts a deformation in a specific direction; a body connected with the actuator; and a controller which makes the actuator perform a first stroke in a direction, and a second stroke in another direction being different from that of the first stroke; wherein the actuator performs at least one deformation of bending and twisting according to position of the smart material and directionality of the directional material, and furthermore enables to simultaneously perform the smooth bending and twisting motion with the simple structure by adjusting the position of the smart material functioning as the active component, and the directionality of the directional material functioning as the passive component.

Underwater robot based on flapping

Provided is a sulfamide derivative having an adamantyl group represented by the following Formula 1, or a pharmaceutically acceptable salt thereof. The sulfamide derivative suppresses the activity of 11&#x3b2;-hydroxysteroid dehydrogenase type 1 (11&#x3b2;-HSD1), and is useful in the treatment of various diseases that are mediated by 11&#x3b2;-HSD1. 

Sulfamide derivative having an adamantyl group and its pharmaceutically acceptable salt

A semiconductor memory device includes a memory cell array configured to include memory cells, peripheral circuits configured to read out data stored in a selected memory cell in a read operation, and a controller configured to control the peripheral circuits so that the peripheral circuits sense a voltage level of the bit line when a first read voltage of the read voltages is supplied to the word line and the peripheral circuits sense voltage levels of the bit line when a second read voltage lower than the first read voltage by a specific level and a third read voltage higher than the first read voltage by the specific level are supplied to the word line in order to determine whether a threshold voltage of the selected memory cell falls within a set voltage distribution in the read operation.

Semiconductor memory device and method of reading out the same

Disclosed is a method of manufacturing soundproofing composite, and a soundproofing composite manufactured by the aforementioned method, the method comprising preparing a mixture by dissolving PP resin and nanoclay in a solvent; and volatilizing the solvent from the mixture. According to the present invention, the composite is manufactured by dissolving PP resin and nanoclay, to thereby realize great stiffness and soundproofing properties.

Soundproofing nanoclay composite and method of manufacturing the same

A method of programming a semiconductor device includes performing a Least Significant Bit (LSB) program operation on selected memory cells, performing a soft program operation on the remaining memory cells other than memory cells on which the LSB program operation has been performed, and performing a Most Significant Bit (MSB) program operation on memory cells, selected from among the memory cells on which the LSB program operation has been performed and the memory cells on which the soft program operation has been performed.

Semiconductor device and method of programming the same

Growing community of inventors

Seoul, South Korea

Sung Hoon Ahn