Goldstar Electron Co., Ltd.

Sung-Ho Wang

Jin-Hong Ahn

Tae-Hyoung Kim

A method for driving bit line selecting signals is disclosed, in which the DRAM cell includes a plurality of memory cell arrays, sense amplifiers, bit lines, bit line equalizer sections, bit line selecting sections, data input/output sections, and bit line selection signal generating sections. According to the present invention, the bit line selecting signals operate in such a manner that: during a bit line selection, a bit line selecting signal for connecting one pair of bit lines among the n pairs of bit lines to the sense amplifier is made to have a voltage level capable of connecting the bit lines to the sense amplifier by the help of the bit line selecting section without a voltage loss; the other bit line selecting signals corresponding to the non-selected remaining bit lines are given a voltage incapable of connecting the bit lines the sense amplifier by the bit line selecting section; thereafter, during the pre-charging for a bit line equalization, the bit line selecting signal corresponding to the bit line which was selected just before is given a voltage capable of connecting the bit lines to the sense amplifier by the help of the bit line selecting section; and the bit line selecting signals which do not correspond to the bit line selected just before are maintained without a voltage shifting.

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Kyungki-do, South Korea

Sung-Ho Wang