Wonik Ips Co., Ltd.

Sung Ho Roh

Young Jun Kim

Byoung Guk Son

Chang Hee Han

Cheong Hwan Jeong

Tae Dong Kim

Jung Hwan Lee

Sung Ho Jeon

Ja Hyun Koo

Woo Young Park

Yeong Taek Oh

Sung Eun Lee

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a substrate is processed at a high pressure and a low pressure. The substrate processing apparatus of the present invention includes: a process chamber () including a chamber body () which has an opened upper portion and in which an installation groove () is defined at a central side of a bottom surface () thereof, and a gate () configured to load/unload a substrate () is disposed at one side thereof, and a top lid () coupled to the upper portion of the chamber body () to define an inner space (S); a substrate support () installed to be inserted into the installation groove () of the chamber body () and having a top surface on which the substrate () is seated.

Substrate processing apparatus

The present invention provides a substrate processing apparatus including: a process chamber having a process space in which a substrate is processed; a substrate support including a susceptor having a plurality of pocket grooves recessed in a circumferential direction from a top surface with a circular plate shape so that the substrate is seated, a shaft configured to rotate the susceptor, and a satellite seated in the pocket groove and on which the substrate is seated; and a gas injection unit disposed at an upper portion of the process chamber to face the substrate support, thereby injecting a process gas toward the substrate support.

Growing community of inventors

Yongin-si Gyeonggi-do, South Korea

Sung Ho Roh