Samsung Electronics Co., Ltd.

Sung-Ho Kang

Young-Min Kim

Hong-Sick Park

June-Hee Lee

Jae-hyoung Choi

Min-Chul Kim

Han-Kyul Lim

Hong-Je Cho

Jung-Hee Chung

Dong-Chul Choi

Seog-Min Lee

Byung-Wook Cho

Yong-hun Lee

Gon-Su Kang

Sang-Cheol Ha

Jong-bom Seo

Sun-Ho Ryu

Kwang-jun Lee

Ju-Hong Lee

Sun-Hong Choi

A device for generating restoration data by descrambling scramble data includes a linear feedback shift register configured to receive a first clock including a plurality of edges and sequentially generate a plurality of seeds including first to N&#x2212;1th seeds (where N is a natural number of 2 or greater) respectively corresponding to first to N&#x2212;1th edges among the plurality of edges, a seed calculator configured to calculate an Nth seed corresponding to an Nth edge among the plurality of edges by using the first seed, and a descrambler configured to descramble the scramble data by using the plurality of seeds generated by the linear feedback shift register and the Nth seed calculated by the seed calculator. The linear feedback shift register is further configured to generate an N+1th seed by using the Nth seed.

Device for restoring data by using a linear feedback shift register and data tranceiving system including the device

An arc lamp includes an arc tube configured to receive a reaction gas therein, and an anode and a cathode disposed opposite one another within the arc tube and configured to generate an electrical arc. The anode includes an anode head portion extending inwardly from an end portion of the arc tube, and an anode tip portion bonded to the anode head portion and comprising a trench extending in a top surface along a peripheral region of the anode tip portion.

Arc lamp and substrate heating apparatus having the arc lamp

The present invention provides a method for manufacturing a thin film transistor (TFT) array panel by forming a gate line having a gate electrode on an insulating substrate; sequentially depositing a gate insulating layer and a semiconductor layer on the gate line; forming a drain electrode and a data line having a source electrode on the gate insulating and semiconductor layers; and forming a pixel electrode connected to the drain electrode. These elements can be formed by photo-etching using an etchant containing 65 wt % to 75 wt % of phosphoric acid, 0.5 wt % to 15 wt % of nitric acid, 2 wt % to 15 wt % of acetic acid, 0.1 wt % to 8.0 wt % of a potassium compound, and deionized water. Each element of the TFT array panel can be patterned with the etchant of the invention under similar conditions, which simplifies a manufacturing process and saves costs and results in TFT elements having a good profile.

Etchant for conductive materials and method of manufacturing a thin film transistor array panel using the same

A method of manufacturing a dielectric layer for a capacitor including sequentially supplying and purging a first and a second precursor material for a first and a second predetermined amount of time, respectively, in an initial cycle, sequentially supplying and purging the first and the second precursor materials for a third predetermined amount of time, which is shorter than the first and/or second predetermined amount of time, in a post cycle, which follows the initial cycle, and repeating the initial and post cycles to form a dielectric layer having a predetermined thickness.

Method of manufacturing a dielectric film in a capacitor

Growing community of inventors

Hwaseong-si, South Korea

Sung-Ho Kang