Lg Innotek Co., Ltd.

Sung Ho Jung

Sang Youl Lee

Jin Kyung Choi

Youn Joon Sung

Jae Won Seo

Hyun Don Song

Rak Jun Choi

Byeoung Jo Kim

Hyun Jee Oh

Hoe Jun Kim

Bum Jin Yim

An embodiment discloses a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, and a semiconductor device package including the same. The second conductive semiconductor layer includes a first surface on which the second electrode is disposed. The second conductive semiconductor layer has a ratio of a second shortest distance W, which is a distance from the first surface to a second point, to a first shortest distance W, which is a distance from the first surface to a first point, (W:W) ranging from 1:1.25 to 1:100. The first point is a point at which the second conductive semiconductor layer has the same aluminum composition as a well layer of the active layer closest to the second conductive semiconductor layer. The second point is a point at which the second conductive semiconductor layer has the same dopant composition as the aluminum composition.

Semiconductor device having layers including aluminum and semiconductor device package including same

A light emitting device includes a substrate; a light emitting structure disposed on the substrate; a first insulation layer disposed on the light emitting structure; a second insulation layer disposed on the first insulation layer; a first electrode and a second electrode electrically connected to the light emitting structure; a first pad electrically connected to the first electrode; and a second pad electrically connected to the second electrode.

Light emitting device, light emitting device package including the device, and lighting apparatus including the package

A light-emitting diode according to the present invention comprises: a light-emitting structure which includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; passivation layer which protects the light-emitting structure; and a metal layer formed, between the light-emitting structure and the passivation layer, on the light-emitting structure, wherein a distance between the passivation layer and the metal layer is 4 to 12 times greater than the thickness of the passivation layer.

Light-emitting diode

A light emitting device includes a sapphire substrate; a light emitting structure disposed on the sapphire substrate, and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a second electrode electrically connected to the second conductivity type semiconductor layer; a first bonding pad electrically connected to the first electrode; a second bonding pad electrically connected to the second electrode; a first insulation layer disposed on the light emitting structure; and a second insulation layer disposed between the second electrode and the second bonding pad.

A light-emitting device in an embodiment includes a substrate, a light-emitting structure which is disposed on the substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes which are respectively connected to the first and second conductive semiconductor layers, first and second bonding pads respectively connected to the first and second electrodes, and an insulating layer disposed between the first bonding pad and the second electrode, and between the second bonding pad and the first electrode. The first thickness of the first electrode may be &#x2153; or less of the second thickness of the insulating layer disposed between the second bonding pad and the first electrode.

Light-emitting device and light-emitting device package

A light emitting device of an embodiment includes a substrate, a light emitting structure disposed under the substrate, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes respectively connected to the first and second conductive semiconductor layers, a metal reflecting layer disposed under the light emitting structure, and a first insulating layers disposed between the first electrode and the light emitting structure, between the first electrode and the second electrode, and between the first electrode and the metal reflecting layer, wherein the metal reflecting layer includes a first segment overlapped with the second electrode in a thickness direction of the light emitting structure and a second segment disposed with extending from the first segment.

Disclosed are a light emitting device package and a lighting apparatus. The light emitting device package includes a substrate, a light emitting structure disposed under the substrate and including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode connected to the first conductive type semiconductor layer exposed through at least one contact hole, a second electrode connected to the second conductive type semiconductor layer, a first insulating layer configured to extend from under the light emitting structure to a space between a side of the light emitting structure and the first electrode and configured to reflect light, and a reflective layer disposed under the first insulating layer.

Light emitting device package and lighting apparatus including the same

A light emitting device and a light emitting device package are provided. The light emitting device may include a substrate, a light emitting structure provided under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first insulating layer configured to expose the second conductive semiconductor layer and provided on a lower edge of the light emitting structure, a first light permeable electrode layer provided under the second conductive semiconductor layer exposed by the first insulating layer, a second light permeable electrode layer provided under the first insulating layer and the first light permeable electrode layer, and a reflective layer provided under the second light permeable electrode layer.

Light emitting device and light emitting device package including the same

A light emitting device includes a semiconductor structure layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. A plurality of lower refractive layers is provided on an outer surface of the semiconductor structure layer. The lower refractive layers includes a first lower refractive layer having a first refractive index lower than a refractive index of the semiconductor structure layer on a surface of the semiconductor structure layer, and a second lower refractive layer having a second refractive index lower than the first refractive index on an outer surface of the first lower refractive layer. The second refractive index of the second lower refractive layer is 1.5 or less, and the second lower refractive layer is provided on an outer surface thereof with a plurality of protrusions. The second lower refractive layer includes a plurality of metallic oxide powders.

Growing community of inventors

Seoul, South Korea

Sung Ho Jung