Samsung Electronics Co., Ltd.

Kookje Electric Korea Co., Ltd.

Sung-Ho Heo

Yong-Sung Park

Bong-jin Kuh

Hee-Seok Kim

Sung-ho Kang

Yong-Kyu Joo

Jung-Hwan Kim

Ki-Hyun Hwang

Jae-Ho Choi

Woo-Sung Lee

Hun-hyeong Lim

In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same

A method of forming a gate structure includes forming a tunnel insulation layer pattern on a substrate, forming a floating gate on the tunnel insulation layer pattern, forming a dielectric layer pattern on the floating gate, the dielectric layer pattern including a first oxide layer pattern, a nitride layer pattern on the first oxide layer pattern, and a second oxide layer pattern on the nitride layer pattern, the second oxide layer pattern being formed by performing an anisotropic plasma oxidation process on the nitride layer, such that a first portion of the second oxide layer pattern on a top surface of the floating gate has a larger thickness than a second portion of the second oxide layer pattern on a sidewall of the floating gate, and forming a control gate on the second oxide layer.

Gate structures

Growing community of inventors

Suwon-si, South Korea

Sung-Ho Heo