Samsung Electronics Co., Ltd.

Sung-ho Han

Sang-Woo Lee

Kyung-In Choi

Gil-heyun Choi

Dae-Yong Kim

Rak-Hwan Kim

A metal layer can be formed in an integrated circuit by forming a metal-nitride layer in a recess including a first concentration of nitrogen in the metal-nitride layer at a bottom of the recess that is less than a second concentration of nitrogen in the metal-nitride layer proximate an opening of the recess. A metal layer can be formed on the metal-nitride layer including in the recess.

Methods of forming metal-nitride layers in contact holes

A method of forming a metal wiring layer of a semiconductor device produces metal wiring that is free of defects. The method includes forming an insulating layer pattern defining a recess on a substrate, forming a conformal first barrier metal layer on the insulating layer pattern, and forming a second barrier metal layer on the first barrier metal layer in such a way that the second barrier metal layer will facilitate the growing of metal from the bottom of the recess such that the metal can fill a bottom part of the recess completely and thus, form damascene wiring. An etch stop layer pattern is formed after the damascene wiring is formed so as to fill the portion of the recess which is not occupied by the damascene wiring.

Growing community of inventors

Seoul, South Korea

Sung-ho Han