Samsung Electronics Co., Ltd.

Dongguk University Industry-Academic Cooperation Foundation

University-Industry Cooperation Group of Kyung Hee University

Sung Heo

Gyeongsu Park

Eunae Cho

Yongsu Kim

Sungjin Kim

Dongjin Lee

Satoru Yamada

Ji Eun Lee

Han Jin Lim

Moonyoung Jeong

Jiho Yoo

Kyoung-Ho Jung

Dong Su Ko

Hyung-Ik Lee

Kyung Bae Park

Ki-Hyun Hwang

Han-Mei Choi

Han-su Kim

Kyu Sik Kim

Takkyun Ro

Jae-man Choi

Moon-seok Kwon

Hyun Uk Park

Hoon Young Cho

In-yong Song

Eun-ha Lee

Dong-Chul Yoo

Dongjin Yun

Byong-Ju Kim

Gyeong-su Park

Seong Heon Kim

Dong-wook Kwak

Sung Ho Kim

Hyun Soo Park

Hyun Wook Park

Byounglyong Choi

Wenxu Xianyu

Jusik Kim

Yongsung Kim

Jong Won Chung

Wooyoung Yang

Myungjin Lee

Eunkyung Lee

Hyung-suk Jung

Ryounghee Kim

Yongchul Kim

Kihong Kim

Jaehak Lee

Hion-suck Baik

Satoh Ryuichi

Joo Ho Lee

Yong-Koo Kyoung

Young-Su Chung

Jaegwan Chung

Chan-Hee Park

Nam Jeong Kim

Sukho Choi

Yong-Young Park

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Semiconductor device and method of manufacturing the same

Provided are an optoelectronic apparatus including an on-chip optoelectronic diode capable of receiving and emitting light, and a method of manufacturing the same.

Optoelectronic apparatus and method of manufacturing the same

A protected anode, an electrochemical device including the same, and a method of preparing the electrochemical device. The protected anode may include: an anode layer; and a protective layer including an oxide represented by Formula 1, on the anode layer:AMO  Formula 1In Formula 1, A is at least one of Ge, Sb, Bi, Se, Sn, or Pb; M is at least one of In, TI, Sb, Bi, S, Se, Te, or Po; A and M are different from each other; and 0<x<100 and 0<y<100.

Protected anode, electrochemical device including the same, and method of preparing the electrochemical device

Disclosed is an optoelectronic device including a first electrode and a second electrode facing each other; a metal layer pattern disposed between the first electrode and the second electrode; a buffer layer covering the metal layer pattern; and a photoelectric conversion layer on the buffer layer. The metal layer pattern includes a metal having a negative dielectric constant and the buffer layer includes a compound selected from silicon nitride (SiN, 0&#x3c;x&#x3c;1), silicon oxynitride (SiON, 0&#x3c;y&#x3c;0.5, 0&#x3c;z&#x2264;1), P-doped silicon oxynitride (SiON:P, 0&#x3c;y&#x3c;0.5, 0&#x3c;z&#x2264;1), and a combination thereof.

Optoelectronic device including a metal layer pattern including a metal having a negative dielectric constant and image sensor and electronic device including the same

An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiN, 0&#x3c;x&#x3c;1), silicon oxynitride (SiON, 0&#x3c;y&#x3c;0.5, 0&#x3c;z&#x3c;1), and a combination thereof.

Optoelectronic device, and image sensor and electronic device including the same

An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoO(2.58&#x2266;x1&#x3c;3.0), ZnO(1.0&#x2266;x2&#x3c;2.0), TiO(1.5&#x2266;x3&#x3c;2.0), VO(1.5&#x2266;x4&#x3c;2.0), TaO(1.0&#x2266;x5&#x3c;2.5), WO(2.0&#x3c;x6&#x3c;3.0), and a combination thereof.

A silicon nanowire including metal nanoclusters formed on a surface thereof at a high density. The metal nanocluster improves electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.

Silicon nanowire comprising high density metal nanoclusters and method of preparing the same

A silicon nanowire includes metal nanoclusters formed on a surface thereof at a high density. The metal nanoclusters improve electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.

A memory device and a method of fabricating the same are provided. The memory device includes a tunneling dielectric layer on a substrate, a charge storage layer on the tunneling dielectric layer, a blocking dielectric layer on the charge storage layer, the blocking dielectric layer including a first dielectric layer having silicon oxide, a second dielectric layer on the first dielectric layer and having aluminum silicate, and a third dielectric layer formed on the second dielectric layer and having aluminum oxide, and an upper electrode on the blocking dielectric layer.

Memory device and method of fabricating the same

A semiconductor integrated circuit device is provided. The semiconductor integrated circuit device includes a plurality of isolation regions which are formed within a semiconductor substrate and define active regions. A tunnel layer and a trap seed layer are formed in each of the active regions and are sequentially stacked between the isolation regions. A trap layer is formed on the trap seed layer and protrudes further than a top surface of each of the isolation regions. A blocking layer is formed on the trap layer. A gate electrode is formed on the blocking layer.

Semiconductor integrated circuit device and method of fabricating the same

Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption ability, and thus can be effectively used in a variety of fields, such as various semiconductor devices including CTF memory, image sensors, photodetectors, light emitting diodes, laser diodes, and the like.

Silica nanowire comprising silicon nanodots and method of preparing the same

Example embodiments provide a complementary metal-oxide semiconductor (CMOS) semiconductor device and a method of fabricating the CMOS semiconductor device. The CMOS semiconductor device may include gates in the nMOS and pMOS areas, polycrystalline silicon (poly-Si) capping layers, metal nitride layers underneath the poly-Si capping layers, and a gate insulating layer underneath the gate. The metal nitride layers of the nMOS and pMOS areas may be formed of the same type of material and may have different work functions. Since a metal gate is formed of identical types of metal nitride layers, a process may be simplified, yield may be increased, and a higher-performance CMOS semiconductor device may be obtained.

CMOS semiconductor device and method of fabricating the same

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Suwon-si, South Korea

Sung Heo