Samsung Electronics Co., Ltd.

Other

Sung Hee Han

Ki Seok Lee

Yoo Sang Hwang

Keun Nam Kim

Sang Ho Lee

Eun Ah Kim

Sang Yeon Han

Jay-Bok Choi

Jin-Hwan Chun

Seung Uk Han

Yong Seok Ahn

Bong-Soo Kim

Hui-Jung Kim

Myeong-Dong Lee

Seok Han Park

Sang-Il Han

Jun-Won Lee

Doo Jin Kim

In Cheol Nam

Kyu Jin Kim

Kyu Hyun Lee

Dae Sun Kim

Jae Hyun Yoon

Yeon Seok Choi

A includes an element isolation region, a first active region bounded by the element isolation region and that extends in a first direction and includes first and second parts disposed at a first level, and a third part disposed at a second level located above the first level, and a gate electrode disposed inside each of the element isolation region and the first active region and that extends in a second direction different from the first direction. The second part is spaced apart in the first direction from the first part, and the third part contacts each of the first and second parts. A first width in the second direction of the first part is less than a second width in the second direction of the third part.

Semiconductor device and method for fabricating the same

A semiconductor device includes a device isolation layer defining first and second active regions, a buried contact connected to the second active region, and first and second bit line structures disposed on the first and second active regions. Each of the first and second bit line structures comprises a bit line contact part and a bit line pass part. The bit line contact part is electrically connected to the first active region. The bit line pass part is disposed on the device isolation layer. A height of a lowest part of the buried contact is smaller than a height of a lowest part of the bit line pass part. The height of the lowest part of the buried contact is greater than a height of a lowest part of the bit line contact part. A lower end of the bit line pass part is buried in the second active region.

Semiconductor device and method of fabricating the same

A semiconductor device includes a substrate having a trench, a bit line in the trench, a first spacer extending along the trench and at least a portion of a side surface of the bit line and in contact with the bit line, and a second spacer disposed within the trench on the first spacer. The bit line is narrower than the trench, and the first spacer includes silicon oxide. A method of forming a semiconductor device includes forming a trench in a substrate, forming a bit line within the first trench of width less than that of the first trench, and forming a first spacer that lines a portion of the trench and includes silicon oxide in contact with at least a portion of a side surface of the bit line, and forming a second spacer over the first spacer in the trench.

A semiconductor device includes a substrate including an active region and an element isolation region defining the active region, a gate trench extending into the element isolation region and penetrating the active region, and a gate structure filling the gate trench and including a first conductivity-type semiconductor layer, a conductive layer, and a second conductivity-type semiconductor layer, sequentially stacked from a lower portion of the gate trench.

Semiconductor device

Disclosed is a protection device for a blind string. The protection device includes a bellows tube provided in a tubular structure, allowing the blind string to pass through an inner part thereof, and having a length increased or reduced in a longitudinal direction of the blind string, a first module coupled with a lower end portion of the bellows tube and having an inner part to which an end portion of the blind string is locked, and a second module decoupled from the first module at an upper portion of the first module while the bellows tube is interposed between the first module and the second module, such that the bellows tube is folded. The bellows tube has a difference in the thickness of the skin thereof such that the bellows tube is automatically spread due to elasticity thereof when the second module is moved up from the first module.

Protection device for blind string

Growing community of inventors

Hwaseong-si, South Korea

Sung Hee Han