Electronics and Telecommunications Research Institute

Samsung Display Co., Ltd.

Other

Sung Haeng Cho

Jaehyun Moon

Do-Hyun Kim

Seung Youl Kang

Jae-Eun Pi

Chi-Sun Hwang

Dong-Hoon Lee

Sang Ho Park

Jeong Ik Lee

Cheol Kyu Kim

Chong Sup Chang

Yoon Ho Khang

Jung Kyu Lee

Yong-Su Lee

Seongdeok Ahn

Se Hwan Yu

Dong Jo Kim

Jae Woo Park

Dong Hoon Lee

Chan Woo Park

Yong Hae Kim

Young Sam Park

Nam Sung Cho

Jong-Heon Yang

Seong-Mok Cho

Jeho Na

Ji Hun Choi

Young Joo Choi

Sang-Hee Park

Himchan Oh

Byung-Do Yang

Sooji Nam

Hee-ok Kim

Jae-Min Kim

Byoung Gon Yu

Jae Bon Koo

Doo-Hee Cho

Chul Woong Joo

Ji-Young Oh

Bock Soon Na

Jonghee Lee

Jong Tae Lim

Hyunkoo Lee

Byoung-Hwa Kwon

Hyunsu Cho

Su Jae Lee

Provided is a Complementary Metal Oxide Semiconductor (CMOS) logic element. The CMOS logic element includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes an NMOS area vertically spaced apart from the PMOS area, a first transistor disposed on the PMOS area, and a second transistor disposed on the NMOS area and complementarily connected to the first transistor, wherein the first transistor includes a first gate electrode, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, wherein the second transistor includes a second gate electrode and a second channel vertically overlapping the second gate electrode, wherein the first channel includes silicon, wherein the second channel includes an oxide semiconductor.

CMOS logic element including oxide semiconductor

Provided are stretchable electronics and a method for manufacturing the same. The stretchable electronics may include a substrate, a plurality of electronic elements disposed to be spaced apart from each other on the substrate, and a wire structure disposed on the substrate to connect the plurality of electronic elements to each other. The wire structure may include an insulator extending from one of the electronic elements to the other of the adjacent electronic elements and a metal wire configured to cover a top surface and side surfaces of the insulator. The insulator may include at least one bent part in a plan view.

Stretchable electronics and method for manufacturing the same

Provided is a static random-access memory (SRAM) device. The SRAM device includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes a first NMOS area and a second NMOS area vertically separated from the PMOS area with the first NMOS area therebetween, a first transistor including a first gate electrode disposed on the PMOS area, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, a second transistor including a second gate electrode disposed in the first NMOS area and a second channel vertically overlapping the second gate electrode, and a third transistor including a third gate electrode disposed in the second NMOS area and a third channel vertically overlapping the third gate electrode, wherein the first channel includes silicon, wherein the second channel and the third channel include an oxide semiconductor.

SRAM device including oxide semiconductor

Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.

Semiconductor device, display panel, and display device including the same

According to an exemplary embodiment of the present invention, by providing an apparatus for fabricating a stretchable electronic element including a chamber, a plurality of sample portions loaded into the chamber and spaced apart from each other, while the chamber is maintained at atmospheric pressure, and a movable member moving the plurality of sample portions and compressing each of the plurality of sample portions together while the chamber is kept under vacuum, it is possible to fabricate variable stretchable electronic elements.

Method and apparatus for fabricating a stretchable electronic element

Provided is a complex biometric sensor. The complex biometric sensor includes a substrate including a light emitting region, a first light receiving region, and a second light receiving region, a light emitting part disposed adjacent to the substrate in the light emitting region, a color conversion layer disposed on the substrate in the light emitting region and vertically overlapping the light emitting part; a first light receiving layer disposed on the substrate in the first light receiving region, and a second light receiving layer disposed on the substrate in the second light receiving region. The light emitting part generates light of a first wavelength. The color conversion layer receives light of the first wavelength and emits the light of the first wavelength and light of the second wavelength. The first light receiving layer detects the light of the first wavelength. The second light receiving layer detects the light of the second wavelength.

Complex biometric sensor including color conversion layer

The inventive concept provides an organic electronic device and a method of fabricating the same. The organic electronic device includes a flexible substrate configured to include a first region and a second region which are laterally spaced apart from each other, an organic light-emitting diode disposed in the first region of the flexible substrate, and a photodetector disposed in the second region of the flexible substrate, wherein the organic light-emitting diode and the photodetector are disposed on the same plane.

Organic electronic device and method of fabricating the same

A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

Thin film transistor array panel and manufacturing method thereof

Provided is a thin film transistor array panel. The thin film transistor array panel according to exemplary embodiments of the present invention includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.

Transistor and method of fabricating the same

A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc.

Thin film transistor array panel

An inflatable air-belt comprises an air tube and a sheath surrounding the air tube. While the sheath has a flat strip shape when the air-belt is used as an usual flat belt, the air tube is inflated when a predetermined impact is applied to a sensor for the air-belt. The air tube may be folded toward its center along its both sides. The sheath may be formed with cut perforated lines along its both sides. The sheath may comprise two flat strips which are attached to each other by means of hook-loop fastener attached to longitudinal edges of the flat strips. The air-belt is provided at its middle portion with a locking buckle assembly for securing the middle portion of the air-belt to the vehicle body. The locking buckle assembly has a locking buckle fixed to the vehicle body and a buckle tongue connected to the air-belt. The buckle tongue is formed with a breakable portion defined by a perforated line extended from both ends of hole thereof such that the perforated line extended from both ends of hole thereof such that the breakable portion is removed to form an enlarged hole by inflation of the air-belt at the time of collision.

Inflatable air-belt for vehicle safety system

Growing community of inventors

Cheongju, South Korea

Sung Haeng Cho