International Rectifier Corporation

Transphorm Inc.

Transphorm Technology, Inc.

Sung Hae Yea

Yifeng Wu

Primit A Parikh

David Michael Rhodes

Vijay Bolloju

Sam Sundaram

An electronic module for a half-bridge circuit includes a base substrate with an insulating layer between a first metal layer and a second metal layer. A trench formed through the first metal layer electrically isolates first, second, and third portions of the first metal layer from one another. A high-side switch includes an enhancement-mode transistor and a depletion-mode transistor. The depletion-mode transistor includes a III-N material structure on an electrically conductive substrate. A drain electrode of the depletion-mode transistor is connected to the first portion, a source electrode of the enhancement-mode transistor is connected to the second portion, a drain electrode of the enhancement-mode transistor is connected to a source electrode of the depletion-mode transistor, a gate electrode of the depletion-mode transistor is connected to the electrically conductive substrate, and the electrically conductive substrate is connected to the second portion.

Module configurations for integrated III-nitride devices

Module configurations for integrated III-Nitride devices

Electronic modules, and methods of forming and operating modules, are described. The modules include a capacitor, a first switching device, and a second switching device. The electronic modules further include a substrate such as a DBC substrate, which includes an insulating layer between a first metal layer and a second metal layer, and may include multiple layers of DBC substrates stacked over one another. The first metal layer includes a first portion and a second portion isolated from one another by a trench formed through the first metal layer between the two portions. The first and second switching devices are over the first metal layer, a first terminal of the capacitor is electrically connected to the first portion of the first metal layer, and a second terminal of the capacitor is electrically connected to the second portion of the first metal layer, with the capacitor extending over the trench.

Semiconductor modules and methods of forming the same

A surface mounted package for semiconductor die has a lead frame with a first and elongated die pad which receives three MOSgated die spaced along its length; second, third and fourth die pads laterally spaced from the first die pad and in a row parallel to the first die pad and receiving respective MOSgated die. A central wire bond receiving pad is disposed between the first pad and the spaced second, third and fourth pads. Wire bonds then connect the die into a three phase inverter circuit. Pin connectors extend through a plastic housing covering the top of the lead frame and are connectable, with the die pads, to the surface of a PCB.

SMT three phase inverter package and lead frame

A dual plane microelectronic relay comprises an input lead frame for carrying an LED an output lead frame carrying a PVG and FETs which are turned on by the output of the PVG in response to its illumination by the LED. Each lead frame is offset in opposite directions so that the lead frame segments carrying the LED and FETs are disposed atop one another while their extending contact pins are coplanar and in line. The PVG and LEDs along the lead frames are accurately located relative to one another by indexed tabs on the side rails of the lead frames. A clear silastic fills the volume between the PVG and LED and the individual units are transfer molded, using an opening in the lead frame rail as a mold gate. A 6 terminal SOP-6 package is formed.

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Sung Hae Yea