Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Sung-Gon Jung

Gi-Sung Yeo

Han-Ku Cho

Cha-Won Koh

Hoo-Sung Cho

Jung-hyeon Lee

Doo-youl Lee

Suk-Joo Lee

Gyu-Chul Kim

Man-Hyoung Ryoo

Chang-Min Park

Si-Hyeung Lee

Ji-young Lee

In-sung Kim

Sang-Jin Kim

Sang-Gyun Woo

Sook Jin Lee

Woo-Sung Han

Seong-woon Choi

Pan-suk Kwak

Seok-Hwan Oh

Jeong-lim Nam

Sang-Keun Lee

Young-Mi Lee

Joo-On Park

Sang-Su Han

Seung-Seok Nam

According to some embodiments of the invention, a substrate doped with a P type impurity is provided. An N type impurity is doped into the substrate to divide the substrate into a P type impurity region and an N type impurity region. Active patterns having a first pitch are formed in the P type and N type impurity regions. Gate patterns having a second pitch are formed on the active patterns in a direction substantially perpendicular to the active patterns. Other embodiments are described and claimed.

Semiconductor device having sufficient process margin and method of forming same

A method of processing data including dividing, at a transmitter, data into 3-bit units, generating, at the transmitter, first and second clock embedded data signals and a third data signal, wherein a clock signal and first bits of the units are included in the first clock embedded data signal, the clock signal and second bits of the units are included in the second clock embedded data signal and third bits of the units are included in the third data signal, transmitting, from the transmitter to a receiver, the first and second clock embedded data signals and the third data signal, and restoring, at the receiver, the first and second bits and the clock signal from the first and second clock embedded data signals and the third bits from the third data signal.

Method of processing data and a display apparatus performing the method

Embodiments relate to a method of decomposing a layout of a semiconductor device. The method may include generating a pattern layout including first patterns and second patterns, generating an interference map for the pattern layout, the interference map including optical interference information regarding the first and second patterns, and decomposing the pattern layout into a first decomposition pattern layout including the first patterns, and a second decomposition pattern layout including the second patterns, based on the interference map. In the interference map, an influence of constructive interference on the first patterns may be greater than an influence of constructive interference on the second patterns.

Method of decomposing layout of semiconductor device

A method of forming a line/space pattern includes forming a plurality of first pattern structures on a layer of hard mask material disposed on a substrate, forming a plurality of second pattern structures along sidewalls of the first pattern structures, removing the first pattern structures such that the second pattern structures stand alone on the layer of hard mask material, forming a first mask that exposes a location where a space of the line/space pattern to be formed is to have a width greater than the distance between adjacent ones of the second pattern structures, removing those of the second pattern structures which are exposed by the first mask such that others of the second pattern structures remain on the layer of hard mask material, forming a second mask that covers a location where a line of the line/space pattern to be formed is to have a width that is greater than the widths of the second pattern structures, forming a hard mask by etching the hard mask material layer using the second mask and the remaining second pattern structures as an etch mask, and etching the substrate using the hard mask as an etch mask.

Method of forming line/space patterns

A method for forming fine patterns of a semiconductor device includes forming an etching film on a substrate having first and second areas, forming first mask patterns on the substrate to have a first pattern density in the first area and a second pattern density in the second area, forming first capping patterns between the first mask patterns, forming second capping patterns between the first mask patterns, such that recess areas are formed between second capping patterns, and such that a first etching pattern is defined to include the first and second capping patterns, forming second mask patterns in the recess areas to include the first and second mask patterns, removing one of the first and second etching patterns, such that a single etching pattern is remaining on the substrate, and etching the etching film using the remaining etching pattern as an etch mask to form etching film patterns.

Method for forming fine patterns of a semiconductor device using a double patterning process

A method of manufacturing a mask includes designing a first mask data pattern, designing a second mask data pattern for forming the first mask data pattern, acquiring a first emulation pattern, which is predicted from the second mask data pattern, using layout-based Self-Aligning Double Patterning (SADP) emulation, comparing the first emulation pattern with the first mask data pattern, and modifying the second mask data pattern according to results of the comparison. The method further includes performing Optical Proximity Correction (OPC) on the modified second mask data pattern, acquiring second emulation patterns, which are predicted from the second mask data pattern on which the OPC has been performed, using image-based SADP emulation, and comparing the second emulation patterns and the first mask data pattern and manufacturing a first mask layer, which corresponds to the second mask data pattern on which the OPC has been performed, according to the results of the comparison.

Method of manufacturing a mask

A method of forming fine metal interconnect patterns includes forming an insulating film on a substrate, forming a plurality of mold patterns with first spaces therebetween on the insulating film, such that the mold patterns have a first layout, forming metal hardmask patterns in the first spaces by a damascene process, removing the mold patterns, etching the insulating film through the metal hardmask patterns to form insulating film patterns with second spaces therebetween, the second spaces having the first layout, and forming metal interconnect patterns having the first layout in the second spaces by the damascene process.

Method of forming fine metal patterns for a semiconductor device using a damascene process

Mask sets are provided which may be used to define a first pattern region that has a first pitch pattern and a second pattern region that has a second pitch pattern during the fabrication of a semiconductor device. These mask sets may include a first mask that has a first exposure region in which a first halftone pattern defines the first pattern region and a first screen region in which a first shield layer covers the second pattern region. These mask sets may further include a second mask that has a second exposure region in which a second halftone pattern defines the second pattern region and a second screen region in which a second shield layer covers the first pattern region. The second shield layer also extends from the second screen region to cover a portion of the second halftone pattern.

Multi-exposure semiconductor fabrication mask sets and methods of fabricating such multi-exposure mask sets

A method of manufacturing a mask includes designing a second mask data pattern for forming a first mask data pattern, creating a first emulation pattern, which is determined from the second mask data pattern, using a first emulation, creating a second emulation pattern, which is determined from the first emulation pattern, using a second emulation, comparing a pattern, in which the first and second emulation patterns overlap, with the first mask data pattern, and manufacturing a mask layer, which corresponds to the second mask data pattern, according to results of the comparison.

Method of manufacturing mask

A phase shifting mask (PSM) for manufacturing a semiconductor device and a method of fabricating the same includes a transparent substrate, a main pattern formed on the transparent substrate and comprising a first phase shifting layer having a first optical transmittance greater than 0, and at least one assistant pattern formed on the transparent substrate proximal to the main pattern for phase-shifting by the same degree as the main pattern and having a second optical transmittance, which is less than the first optical transmittance.

Phase shifting mask for manufacturing semiconductor device and method of fabricating the same

In the method of forming a mask structure, a first mask is formed on a substrate where the first mask includes a first mask pattern having a plurality of mask pattern portions having openings therebetween and a second mask pattern having a corner portion of which an inner side wall that is curved. A sacrificial layer is formed on the first mask. A hard mask layer is formed on the sacrificial layer. After the hard mask layer is partially removed until the sacrificial layer adjacent to the corner portion is exposed, a second mask is formed from the hard mask layer remaining in the space after removing the sacrificial layer. A minute pattern having a fine structure may be easily formed on the substrate.

Method of forming a mask structure and method of forming a minute pattern using the same

An apparatus and method for remotely controlling a PC and a monitor are disclosed, including a remote control having a short key for memorizing an operation sequence and short key setting key for setting the operation sequence to the short key, to output the sequence an OSD picture of the monitor when the user wants it. The user pushes a memorized number using the short key, watching the OSD picture, to execute a PC into a desired state. Accordingly, functions performed through complicated procedures can be controlled by the remote control, and the user can easily use the computer using the remote control even if the user does not know the computer well.

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Seoul, South Korea

Sung-Gon Jung