Dnf Co., Ltd.

Sung Gi Kim

Sang Ick Lee

Se Jin Jang

Myong Woon Kim

Byeong-il Yang

Sang-Do Lee

Jeong Joo Park

Joong Jin Park

Sam Dong Lee

Jang Hyeon Seok

Jong Hyun Kim

Sang Yong Jeon

Gun-Joo Park

Do Yeon Kim

Byeong Il Yang

A Ra Cho

Haeng Don Lim

Tae Seok Byun

Yong Hee Kwone

Hee Yeon Jeong

Won Mook Chae

Sang Do Lee

Haengdon Lim

Myoung Woon Kim

Gun Joo Park

Yeong Hun Kim

The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.

Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor

Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present disclosure has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.

Silylcyclodisilazane compound and method for manufacturing silicon-containing thin film using the same

Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same

Provided are a composition for depositing a silicon-containing thin film, containing a trisilylamine compound and a method for producing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a trisilylamine compound which is capable of forming a silicon-containing thin film at a very high deposition rate at a low temperature to be usable as a precursor of a silicon-containing thin film and an encapsulant of a display, and a method for producing a silicon-containing thin film by using the same.

Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the same

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same

Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.

Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition

Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.

Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the same

Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the same

Provided are a novel trisilyl amine derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.

Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the same

Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si&#x2014;N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si&#x2014;N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).

Amino-silyl amine compound and the manufacturing method of dielectric film containing Si&#x2014;N bond by using atomic layer deposition

Provided are a novel cyclodisilazane derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the cyclodisilazane derivative having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under a pressure where handling is easy, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.

Cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the same

Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.

Growing community of inventors

Daejeon, South Korea

Sung Gi Kim