Samsung Electronics Co., Ltd.

Sungkyunkwan University

Sung-Gi Ahn

Kee-Won Kwon

Cheol Su Kim

Rak-Joo Sung

Hyun-Suk Kang

Ji-Su Min

A ternary content addressable memory (TCAM) device includes a memory cell. The memory cell includes a data storage circuit, a limiter circuit, and a discharge circuit. The data storage circuit includes a first resistor and a second resistor connected in series to divide a voltage corresponding to search data, and configured to store cell data. The limiter circuit is configured to receive the divided voltage through an input terminal and transmit an output voltage through an output terminal based on a level of the divided voltage. The discharge circuit discharges a matching line indicating whether the stored cell data matches with the search data, based on the output voltage of the limiter circuit.

TCAM device and operating method thereof

A memory device includes a storage circuit, a first driving circuit, and a second driving circuit. The storage circuit stores first data and compares the first data and second data. The first driving circuit selectively drives a matching line to a first logic state, depending on a comparison result of the first data and the second data by the storage circuit. The second driving circuit drives the matching line to a second logic state regardless of the comparison result.

Memory device driving matching lines according to priority

Growing community of inventors

Suwon-si, South Korea

Sung-Gi Ahn