Hynix Semiconductor Inc.

Hyundai Electronics Industries Co. Ltd.

Sung Eun Hong

Jae Chang Jung

Ki Ho Baik

Min Ho Jung

Geun Su Lee

Jin Soo Kim

Cha Won Koh

Hyeong Soo Kim

Keun Kyu Kong

The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F(157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same

The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R' are as defined in the specification of the invention.

Additive for photoresist composition for resist flow process

The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.

Top-coating composition for photoresist and process for forming fine pattern using the same

Reflection-inhibiting resin used in process for forming photoresist pattern

The present invention provides a method for reducing or eliminating a poor pattern formation on a photoresist film by contacting the photoresist film with an alkaline solution prior to its exposure to light. Methods of the present invention significantly reduce or prevent T-topping and top-loss.

Process for forming a photoresist pattern comprising alkaline treatment

A process for producing a photoresist pattern is disclosed. In particular, the disclosed process for forming a photoresist pattern reduces or prevents poor quality photoresist patterns formation, especially when a high light absorbing (i.e., low transmittance) photoresist resin is used. In one aspect, a photoresist film which has been exposed to light is treated with a gas phase basic compound to produce a substantially vertical photoresist pattern.

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Sungnam-shi, South Korea

Sung Eun Hong