Az Electronic Materials USA Corp.

Sung-Eun Hong

Yusuke Takano

Tetsuo Okayasu

Yasushi Akiyama

Kiyohisa Takahashi

The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a Cto Calkanolamine salt of Cto Cperfluoroalkylcarboxylic acid, Cto Cperfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 &#x212b; to 600 &#x212b;, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.

Process for preventing development defect and composition for use in the same

A water-soluble resin composition of the present invention comprises at least a water-soluble resin, an acid generator capable of generating an acid by heating and a solvent containing water. The water-soluble resin composition is applied on a highly water-repellant resist patternformed by a resist such as an ArF-responsive radiation sensitive resin composition on a substrateto form a coated layerthereon. The resist patternand the coated layerare heat-treated to form a developer-insoluble modified coated layerin the vicinity of a surface of the resist pattern. The coated layer is developed and the resist pattern thickened by the modified layeris formed. The modified layer is a layer with sufficient thickness and is able to be formed with a high dimensional controllability in a highly water-repellant resist pattern such as ArF-responsive radiation sensitive resin composition. As a result, a separation size and a hole aperture size of the resist pattern are reduced effectively to less than a limit resolution. As the modified layerhas a function of a protecting film for the resist pattern upon electron beam irradiation, a size measurement fluctuation of a resist pattern upon electron beam irradiation by a size measuring SEM can be prevented.

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Shizuoka, Japan

Sung-Eun Hong