Az Electronic Materials USA Corp.

Sung Eun Hong

Ralph R Dammel

Yusuke Takano

Yi Cao

Tetsuo Okayasu

Muthiah Thiyagarajan

Takeshi Nishibe

The present invention relates to an aqueous coating composition for coating a photoresist pattern, comprising a polymer comprising at least one unit with an alkylamino group, where the unit has a structure (1), where, Rto Rare independently selected from hydrogen and Cto Calkyl, and W is Cto Calkyl. The invention also relates to a process for imaging a photoresist layer using the present composition.

Composition for coating over a photoresist pattern

In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.

Water soluble resin composition and method for pattern formation using the same

Growing community of inventors

Basking Ridge, NJ, United States of America

Sung Eun Hong