Samsung Electronics Co., Ltd.

Sung-Eui Kim

Do-Hyung Kim

Young-wook Park

Kong-Soo Lee

Jae-Jong Han

Kyoung-Seok Kim

Seung-Mok Shin

Gi-Hyun Hwang

A method for forming a thermal oxide layer on the surface of a semiconductor substrate exposed during a semiconductor fabricating process. The thermal oxide layer is to be thin to minimize silicon substrate defects caused by volume expansion. A chemical vapor deposition (CVD) layer is then formed on the thin thermal oxide layer, creating a required thickness. The thin thermal oxide layer and the CVD material layer are formed in the same CVD apparatus. As a result, a process can be simplified and a particle-leading pollution can be prevented.

Trench isolation structure

Method for forming layer for trench isolation structure

A method of inhibiting pit occurrence on a semiconductor substrate during manufacture of a semiconductor device includes forming an isolation using a shallow trench isolation (STI) method in a semiconductor substrate, forming an insulation layer on an entire surface of the semiconductor substrate having the isolation, implanting ions into the semiconductor substrate using the insulation layer as a buffer layer, annealing the semiconductor substrate using a rapid thermal annealing (RTA) process, forming a photoresist layer on the insulation layer and then forming an opening in the photoresist layer to expose an underlayer thereof, forming an align key by etching the underlayer at the opening, and removing the photoresist layer and the insulation layer. Alternatively, the thickness of the insulation layer may be reduced to prevent the occurrence of pits on active areas of the semiconductor substrate.

Method of manufacturing a semiconductor device including alignment mark

Growing community of inventors

Kyunggi-do, South Korea

Sung-Eui Kim