Samsung Electronics Co., Ltd.

Sung-dong Kim

Seung-bum Hong

Ju-Hwan Jung

Hong-sik Park

Hyoung-soo Ko

Eun-sik Kim

Chul-min Park

Dong-Ki Min

Kyoung-lock Baeck

Hoon-sang Oh

Sung-ho Jin

Yun-seok Kim

A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

Ferroelectric recording medium and writing method for the same

A digital MR sensor with a high magnetoresistance ratio is provided. The MR sensor includes a first magnetic element; and a second magnetic element at least a part of which is resiliently deformable so as to contact with or be separated from the first magnetic element according to a direction of a magnetic force generated between the first and second magnetic elements while the second magnetic element is magnetized under influence of an external magnetic field.

Digital magnetoresistance sensor

Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.

Resistive memory device having array of probes and method of manufacturing the resistive memory device

A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.

Magnetic logic device and methods of manufacturing and operating the same

A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.

Method of writing data on a storage device using a probe technique

An information storage medium and an apparatus adopting the information storage medium. The information storage medium includes: a substrate; a lower magnetic layer formed on the substrate; and an upper magnetic layer, the upper magnetic layer includes an alumina layer having cavities formed on the lower magnetic layer and a magnetic material that is formed in the cavities of the alumina layer, which magnetic material contacts the lower magnetic layer.

Growing community of inventors

Seongnam-si, South Korea

Sung-dong Kim