Lg Innotek Co., Ltd.

Sung Dal Jung

Hyun Don Song

Jong Sub Lee

Seung Hwan Kim

Ki Man Kang

An embodiment of the present invention includes: a gallium nitride substrate; and a light-emitting structure disposed on the other surface of the substrate, wherein the substrate includes a plurality of light extraction structures formed on one surface thereof, the thickness of the substrate is 80 &#x3bc;m or more, and the average height of the plurality of light extraction structures is 10 &#x3bc;m or more.

Light emitting device

Disclosed in an embodiment is a light emitting device comprising: a substrate; a light emitting structure, which includes a first semiconductor layer, an active layer, a second semiconductor layer, and a first groove penetrating through the second semiconductor layer and the active layer and disposed up until a partial region of the first semiconductor layer; a reflective electrode layer covering a lower part of the second semiconductor layer and a sidewalls of the first groove; a first ohmic electrode disposed inside the first groove and electrically connected to the first semiconductor layer; and a first insulation layer for electrically insulating the first ohmic electrode and the reflective electrode layer.

Light emitting device having gallium nitrade substrate

A light emitting device is provided that may include a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer provided on the substrate, a first electrode on the first conductive semiconductor layer, and a schottky guide ring configured to surround the first electrode and directly connect with the first conductive semiconductor layer.

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Seoul, South Korea

Sung Dal Jung