Growing community of inventors

Watervliet, NY, United States of America

Sung Dae Suk

Average Co-Inventor Count = 5.17

ph-index = 1

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 0

Sung Dae SukRuilong Xie (7 patents)Sung Dae SukJunli Wang (4 patents)Sung Dae SukChen Zhang (4 patents)Sung Dae SukDechao Guo (4 patents)Sung Dae SukHeng Wu (4 patents)Sung Dae SukKangguo Cheng (2 patents)Sung Dae SukDevendra K Sadana (2 patents)Sung Dae SukChanro Park (2 patents)Sung Dae SukJulien Frougier (2 patents)Sung Dae SukAndrew Mark Greene (2 patents)Sung Dae SukTao Li (2 patents)Sung Dae SukSomnath Ghosh (2 patents)Sung Dae SukJuntao Li (1 patent)Sung Dae SukVeeraraghavan S Basker (1 patent)Sung Dae SukRuqiang Bao (1 patent)Sung Dae SukJingyun Zhang (1 patent)Sung Dae SukLan Yu (1 patent)Sung Dae SukSung Dae Suk (9 patents)Ruilong XieRuilong Xie (1,158 patents)Junli WangJunli Wang (435 patents)Chen ZhangChen Zhang (331 patents)Dechao GuoDechao Guo (231 patents)Heng WuHeng Wu (170 patents)Kangguo ChengKangguo Cheng (2,827 patents)Devendra K SadanaDevendra K Sadana (829 patents)Chanro ParkChanro Park (308 patents)Julien FrougierJulien Frougier (214 patents)Andrew Mark GreeneAndrew Mark Greene (128 patents)Tao LiTao Li (37 patents)Somnath GhoshSomnath Ghosh (30 patents)Juntao LiJuntao Li (550 patents)Veeraraghavan S BaskerVeeraraghavan S Basker (463 patents)Ruqiang BaoRuqiang Bao (184 patents)Jingyun ZhangJingyun Zhang (172 patents)Lan YuLan Yu (53 patents)
..
Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. International Business Machines Corporation (9 from 163,870 patents)


9 patents:

1. 12426314 - Strain generation and anchoring in gate-all-around field effect transistors

2. 12363990 - Upper and lower gate configurations of monolithic stacked FinFET transistors

3. 12148833 - Three-dimensional, monolithically stacked field effect transistors formed on the front and backside of a wafer

4. 11923434 - Self-aligned bottom spacer epi last flow for VTFET

5. 11817501 - Three-dimensional, monolithically stacked field effect transistors formed on the front and backside of a wafer

6. 11688741 - Gate-all-around devices with isolated and non-isolated epitaxy regions for strain engineering

7. 11476163 - Confined gate recessing for vertical transport field effect transistors

8. 11282838 - Stacked gate structures

9. 11177367 - Self-aligned bottom spacer EPI last flow for VTFET

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10/28/2025
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