Samsung Electronics Co., Ltd.

Sung Chung Park

Jun Jin Kong

Seung-Hwan Song

Dong Hyuk Chae

Dong Ku Kang

Nam Phil Jo

Kyoung Lae Cho

Seung Jae Lee

Young Hwan Lee

Heeseok Eun

Jae Hong Kim

Dongku Kang

Sung-Jae Byun

Young Hee Lee

Donghun Yu

Si Hoon Hong

Jae Woong Hyun

Jong Han Kim

Seung Hoon Lee

Yun Tae Lee

Yoon Sun Park

Dong Gu Kang

Yun Young Kim

Jae Ho Roh

Jung Hun Sung

Kyong Lae Cho

A memory system includes a plurality of memory devices, a controller configured to control the plurality of memory devices, and at least one channel connected between the plurality of memory devices and the controller. The at least one channel includes input/output data lines and control signal lines, which are connected with the plurality of memory devices, and chip enable signal lines respectively connected to each of the plurality of memory devices, wherein the chip enable signal lines enable the plurality of memory devices independently. The controller sends a read command or a program command to one of the plurality of memory devices, and while the one of the plurality of memory devices is performing an internal read operation in response to the read command, the controller reads data from another one of the plurality of memory devices, or while the one of the plurality of memory devices is performing an internal program operation in response to the program command, the controller programs data to another one of the plurality of memory devices.

Flash memory system that uses an interleaving scheme for increasing data transfer performance between a memory device and a controller and a method therof

Memory devices and/or error control codes (ECC) decoding methods may be provided. A memory device may include a memory cell array, and a decoder to perform hard decision decoding of first data read from the memory cell array by a first read scheme, and to generate output data and error information of the output data. The memory device may also include and a control unit to determine an error rate of the output data based on the error information, and to determine whether to transmit an additional read command for soft decision decoding to the memory cell array based on the error rate. An ECC decoding time may be reduced through such a memory device.

Memory device and error control codes decoding method

A multi-level cell (MLC) memory device may include 'a' number of m-bit MLC memory cells; an encoder that encodes 'k' bits of data at a code rate of k/n to generate an encoded bit stream; and a signal mapping module that applies pulses to the MLC memory cells in order to write the encoded bit stream in the MLC memory cells. In the device, &#x2018;a&#x2019; and &#x2018;m&#x2019; may be integers greater than or equal to 2, &#x2018;k&#x2019; and &#x2018;n&#x2019; may be integers greater than or equal to 1, and &#x2018;n&#x2019; may be greater than &#x2018;k&#x2019;. A method of storing data in the device may include encoding &#x2018;k&#x2019; bits of data at a code rate of k/n to generate an encoded bit stream. A method of reading data from the device may include decoding &#x2018;n&#x2019; bits of data at a code rate of n/k to generate a decoded bit stream.

Multi-level cell memory devices and methods of storing data in and reading data from the memory devices

According to an example embodiment, a method of generating a soft decision value using an Analog-to-Digital Converter (ADC) having a given resolution may include receiving metric values calculated based on levels of a transmission signal and output levels of the ADC. Metric values corresponding to a level of a received signal may be selected from among the received metric values. A first maximum metric value may be detected from among the selected metric values when a transmission bit is a first level, and a second maximum metric value may be detected from among the selected metric values when the transmission bit is a second level. The soft decision value may be generated based on a difference between the first maximum metric value and the second maximum metric value.

Apparatus for generating soft decision values using an analog-to-digital converter and method thereof

A Multi-Level Cell (MLC) memory device and method thereof are provided. The example MLC memory device may be configured to perform data operations, and may include an MLC memory cell, a first coding device performing a first coding function, the first coding function being one of an encoding function and a decoding function, a second coding device performing a second coding function, the second coding function being one of an encoding function and a decoding function and a signal module configured to perform at least one of instructing the MLC memory cell to store data output by the second coding device if the first and second coding functions are encoding functions, and generating a demapped bit stream based on data retrieved from the MLC memory cell if the first and second coding functions are decoding functions.

Multi-level cell memory device and method thereof

A code encoding apparatus includes a delay circuit and a code generator. The delay circuit generates delayed information based on p-bit input information received in parallel. The delayed information is generated according to a clock. The code generator generates n&#xb7;p-bit code based on at least one of the input information and the delayed information, where n is a rational number.

Apparatuses and methods for encoding and decoding

An encoding system for encoding error control codes may include a first encoder configured to encode an input bit stream to generate first bit streams of C-bits, where c is an integer greater than zero, and a second encoder may be configured to receive the first bit streams and shuffle data of the received first bit streams to generate second bit streams. The data shuffling of the first bit streams may adjust an error distribution of the second bit streams. An encoding method may include encoding an input bit stream to generate first bit streams of C-bits, and receiving the first bit streams and shuffling data of the received first bit streams to generate second bit streams. An error distribution of the second bit streams may be adjusted based on the data shuffling.

Encoding system and method for encoding error control codes within bit streams

Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate.

Methods of operating memory devices using error correction and rereading techniques

An Error Control Code (ECC) apparatus applied to a memory of a Multi-Level Cell (MLC) method may include: a bypass control signal generator generating a bypass control signal; and an ECC performing unit that may include at least two ECC decoding blocks, determining whether to bypass a portion of the at least two ECC decoding blocks based on the bypass control signal, and/or performing an ECC decoding. In addition or in the alternative, the ECC performing unit may include at least two ECC encoding blocks, determining whether to bypass a portion of the at least two ECC encoding blocks based on the bypass control signal, and/or performing an ECC encoding. An ECC method applied to a memory of a MLC method and a computer-readable recording medium storing a program for implementing an EEC method applied to a memory of a MLC method are also disclose.

Error control code apparatuses and methods of using the same

Apparatuses and methods for cancelling interferences between signals are provided. The apparatuses includes: a receiving unit that receives an orthogonal coded signal from a transmitter and generates a received vector; a channel estimation unit that estimates a state of a wireless channel from the transmitter to the apparatus where the cancelling of the interference between signals is performed and generates a channel state matrix; a Q-R decomposition unit that performs Q-R decomposition with respect to the generated channel state matrix and generates a Q matrix and an R matrix, and generates a decision statistic vector based on the generated Q matrix and the received vector; and a signal determination unit that determines a received signal with interference from the orthogonal coded signal being decreased based on the generated decision statistics vector.

Apparatus and method for cancelling interferences between orthogonal coded signals in mobile communication system

An Error Control Code (ECC) apparatus may include a control signal generator that generates an ECC control signal based on channel information. The ECC apparatus also may include: a plurality of ECC encoding controllers that output data respectively inputted via storage elements corresponding to the ECC control signal; and/or an encoding unit that encodes, using a plurality of data outputted from the plurality of ECC encoding controllers, encoding input data into a number of subdata corresponding to the ECC control signal. In addition or in the alternative, the ECC apparatus may include: a plurality of ECC decoding controllers that output data respectively inputted via the storage elements corresponding to the ECC control signal; and/or a decoding unit that decodes, using a plurality of data outputted from the plurality of ECC decoding controllers, a number of decoding input data corresponding to the ECC control signal into one piece of output data.

A multi-level cell (MLC) memory device may include: a MLC memory cell; an outer encoder that encodes data using a first encoding scheme to generate an outer encoded bit stream; and a trellis coded modulation (TCM) modulator that applies a program pulse to the MLC memory cell to write the data in the MLC memory cell. The program pulse may be generated by TCM modulating the outer encoded bit stream. A method of storing data in a MLC memory device, reading data from the MLC memory device, or storing data in and reading data from the MLC memory device may include: encoding data using a first encoding scheme to generate an outer encoded bit stream; and applying a program pulse to a MLC memory cell of the MLC memory device to write the data in the MLC memory cell. The program pulse may be generated by TCM modulating the outer encoded bit stream.

Multi-level cell memory devices using trellis coded modulation and methods of storing data in and reading data from the memory devices

Multi-bit programming apparatuses and/or methods are provided. A multi-bit programming apparatus may comprise: a multi-bit cell array that includes a first multi-bit cell and a second multi-bit cell; a programming unit for programming first data in the first multi-bit cell, and programming second data in the second multi-bit cell; and a verification unit for verifying whether the first data is programmed in the first multi-bit cell using a first verification voltage, and verifying whether the second data is programmed in the second multi-bit cell using a second verification voltage. The multi-bit programming apparatus may generate better threshold voltage distributions in a multi-bit cell memory.

Apparatus and method of multi-bit programming

A multi-bit programming apparatus may include a first control unit that may generates 2threshold voltage states based on a target bit error rate (BER) of each of the page programming operations, a second control unit that may assign any one of the threshold voltage states to the N-bit data, and a programming unit that may program the assigned threshold voltage state in each of the at least one multi-bit cell to program the N-bit data.

Growing community of inventors

Daejeon, South Korea

Sung Chung Park