Hyundai Electronics Industries Co. Ltd.

Lg Semicon Co., Ltd.

Other

Yonsei University

Hyosung Tns Inc.

Sung Chul Lee

Eun Jeong Park

Min Gyu Lim

Jae Seung Choi

Jin A Kim

Jin Won Park

Jin Keun Seo

Jang Han Kim

Sung Min Lee

Myoung Hwan Ko

Hwa Pyung Kim

Boick Chang

Chang Min Hyun

Yu Sup Kim

Sang Bae Yi

An under-sampling apparatus for MR image reconstruction by using machine learning and a method thereof, an MR image reconstruction device by using machine learning and a method thereof, and a recoding medium thereof are disclosed. The disclosed under-smapling apparatus includes: a setting portion that sets a region corresponding to a center of the k-space image as a first region and remaining regions as a second region; and an under-sampling portion that full-samples the first region and under-samples the second region, wherein in the under-sampling performed in the second region, lines are selected at regular intervals and then only the selected line is full-sampled. According to the under-sampling apparatus, a high-resolution MR image can be acquired while reducing imaing time.

Apparatus and method for reconstructing magnetic resonance image using learning, and under-sampling apparatus method and recording medium thereof

A kiosk device for a motor vehicle includes an imaging unit, a voice input unit, a vehicle detecting unit configured to detect entry of a motor vehicle, a financial automation transaction unit including a touch interface unit, a control unit and a driving unit. When the entry of the motor vehicle is detected by the vehicle detecting unit, the control unit activates the imaging unit and the voice input unit and analyze motion information of a vehicle occupant imaged by the imaging unit or voice information of the vehicle occupant inputted through the voice input unit. The driving unit drives the financial automation transaction unit based on an analysis result of the motion information or the voice information so that the financial automation transaction unit is operated to face a direction of a vehicle occupant location.

Kiosk device for motor vehicle and method for operating the same

The present invention relates to a UV fluid sterilizer, which is suitably formed to sterilize fluid having poor UV transmission. According to the present invention, the UV fluid sterilizer includes a plurality of UV sterilization units. The UV sterilization units include: small quartz tubes; inside UV lamps mounted in the small quartz tubes for radiating UV rays at the inside of fluid; large quartz tubes concentrically mounted outside the small quartz tubes for forming the flow spaces of the fluid; spring type coils spirally fixed to the outer diameter surfaces of the small quartz tubes for applying rotation force to the fluid; and UV transmission shrinks films for fixing the spring type coils to the outer diameter surfaces of the small quartz tubes in close contact and preventing foreign substances from being trapped in the flow spaces of the fluid, and are characterized in that a plurality of outside UV lamps are provided outside the large quartz tubes for radiating UV rays to the fluid, which flows through the UV sterilization units, from the outside.

UV fluid sterilizer suitable to sterilize fluid having poor UV transmission

A semiconductor device in which polysilicon is used to form source and drain regions in an initial process step so as to reduce resistance of bit lines and minimize a junction capacitance and thus improve its reliability, and a method for fabricating the same are disclosed, the semiconductor device including a semiconductor substrate, trenches formed in predetermined areas of the semiconductor substrate, an insulating layer formed in the trenches and beneath a surface of the substrate to have a recess, a polysilicon layer formed on the insulating layer in the trench, source and drain regions formed at both sides of the polysilicon layer beneath a surface of the semiconductor substrate, and gates formed over the semiconductor substrate.

Semiconductor device using a polysilicon layer

Semiconductor device

A semiconductor device in which polysilicon is used to form source and drain regions in an initial process step so as to reduce resistance of bit lines and minimize a junction capacitance and thus improve its reliability, and a method for fabricating the same are disclosed, the semiconductor device including a semiconductor substrate, trenches formed in predetermined areas of the semiconductor substrate, an insualting layer formed in the trenches and beneath a surface of the substrate to have a recess, a polysilicon layer formed on the insualting layer in the trench, source and drain regions formed at both sides of the polysilicon layer beneath a surface of the semiconductor substrate, and gates formed over the semiconductor substrate.

Method of forming a transistor structure

Methods for fabricating a flash memory device which improves both charge retaining characteristics and characteristics of a gate insulating film are disclosed. The methods include the steps of respectively forming a tunneling oxide film and a peripheral oxide film on a cell and peripheral areas of a semiconductor substrate; forming a floating gate line on the tunneling oxide film; forming a first insulating film on a surface of the floating gate line; forming a second insulating film on an entire surface of the semiconductor substrate; forming a third insulating film on the second insulating film so that the third insulating film is thicker than the peripheral oxide film; removing the third insulating film and the second insulating film from the peripheral area by wet etching processes; removing the peripheral oxide film by a wet etching process; forming a gate insulating film on the surface of the semiconductor substrate in the peripheral area; depositing a conductive layer on the entire surface of the semiconductor substrate; selectively removing portions of the conductive layer, the third insulating film, the second insulating film, the first insulating film, and the floating gate line to form a control gate and a floating gate in the cell area, and a gate electrode of a thin film transistor in the peripheral area; and forming source/drain impurity areas within the surface of the semiconductor substrate at both sides of the control gate and floating gate and at both sides of the gate electrode.

Method for fabricating flash memory device and peripheral area

Nonvolatile memory capable of programming and erasure and method for fabricating the same, the method comprising the steps of (1) forming an oxide film on a first conduction type semiconductor substrate, (2) conducting an annealing in an NO or N,O ambient to convert the oxide film into a vertical lamination of a first silicon oxynitride region containing nitrogen and a second silicon oxynitride region containing relatively less nitrogen compared to the first silicon oxynitride region formed on the substrate, (3) patterning a gate electrode on the second oxynitride region, (4) forming second conduction type source, and drain impurity diffusion regions in surfaces of the substrate on both sides of the gate electrode, whereby facilitating a simple and easy fabrication process, a low programming voltage, a high performance, and a high device reliability.

Nonvolatile memory and method for fabricating the same

A non-volatile memory device includes a substrate, a projection having two sides formed on the substrate, a floating gate formed on the projection, a control gate formed on the substrate including the floating gate, a first impurity region formed in the substrate extended from one side of the projection, and a second impurity region formed in the substrate at the other side of the projection and in the substrate extended from the other side of the projection.

Device and fabricating method of non-volatile memory

A semiconductor device having a recessed channel structure which has a semiconductor region positioned at a level above a channel region, including a first conduction type substrate having a channel region therein, a second conduction type semiconductor region formed on the substrate excluding the channel region, a first insulation film formed on the semiconductor region, a second insulation film formed on a surface between the channel region and the semiconductor region, a first gate formed on a gate insulation film on the channel region, and a dielectric film formed between the first gate and the first insulation film. Also, a method for fabricating a semiconductor device having a recessed structure, including the steps of: forming a second conduction type polysilicon film on a first conduction type substrate; forming a first insulation film on the polysilicon film; forming a semiconductor layer by etching the first insulation film and the underlying polysilicon film; forming a second insulation film on an exposed surface of the substrate between the semiconductor layer and at sides of the semiconductor layer and the first insulation film; forming a first gate on the second insulation film; forming a dielectric film on a surface between the first gate and the second insulation film; and forming a second gate on the dielectric film.

Semiconductor device having a recessed channel structure and method for

A method of manufacturing a nonvolatile memory device having a self-aligned structure includes the steps of forming a gate insulating film on a semiconductor substrate of a first conductivity type. A semiconductor layer is formed on the gate insulating film and etched to form floating gates and a semiconductor pattern between the floating gates. Impurity ions of a second conductivity type are implanted into the same side of the substrate as the floating gate is formed, to form a drain region. A planarizing film is deposited on the substrate and etched until the upper surfaces of the floating gates and the semiconductor pattern are exposed. The semiconductor pattern is removed and impurity ions of the second conductivity type are implanted into the substrate, to form a source region. The planarizing film is removed to expose the floating gate, and a dielectric film is formed thereon. Finally, a control gate is formed on the substrate.

Growing community of inventors

Chungcheongbuk-do, South Korea

Sung Chul Lee