Electronics and Telecommunications Research Institute

Other

Sung Bock Kim

Kyung Hyun Park

Young Ahn Leem

El Hang Lee

Jeong Rae Ro

Eun Soo Nam

Jae Kyoung Mun

Sung-Bum Bae

Hae Cheon Kim

Ho Kyun Ahn

Sang Choon Ko

Jong-Won Lim

Min Yong Jeon

Kwang Ryong Oh

Yong Soon Baek

Ki Soo Kim

Chull Won Ju

Dae Kon Oh

Young Rak Park

Woo Jin Chang

Eun Deok Sim

Je Ha Kim

Dong Churl Kim

Sung Bum Bae

Young Shik Kang

Hyun Soo Kim

Jin Soo Kim

Kisoo Kim

Oh Kee Kwon

Su Hwan Oh

Hojun Ryu

Won Seok Han

Jin Hong Lee

Hyun Sung Ko

Gyung Ock Kim

Kwang Seong Choi

Byung Seok Choi

Dongwoo Suh

Moon Ho Park

Sung Ui Hong

Sahng Gi Park

Yong Duck Chung

Eundeok Sim

Dae Su Yee

Ji Youn Lim

Jeong Hoon Kim

A light comb generating device according to a disclosed embodiment includes a light source for generating light in a reference wavelength band and outputting the generated light, and an optical comb generator for generating a light comb having a reference comb interval from the output light, wherein the light source changes a wavelength of the output light as much as a reference frequency interval for every reference time interval, the light comb is generated within a wavelength range of the reference frequency interval, and the reference wavelength band may be at least about 3 &#x3bc;m and no greater than about 30 &#x3bc;m.

Light comb generating device and spectrometers including same

A semiconductor device includes a first semiconductor layer. A second semiconductor layer is disposed on the first semiconductor layer. A structure layer is disposed on the second semiconductor layer. A metal film covers a side surface of the first semiconductor layer, a side surface of the second semiconductor layer, and an upper surface of the structure layer. A flexible substrate covers the metal film.

Semiconductor device

A method for manufacturing a semiconductor device includes sequentially stacking a first epitaxial layer, a sacrificial layer, a second epitaxial layer, and a third epitaxial layer on a first substrate, forming a trench which penetrates the third epitaxial layer, the second epitaxial layer, and the sacrificial layer, forming a structure layer on an upper surface of the third epitaxial layer, forming a metal film which covers an inner surface of the trench and the structure layer, forming a second substrate which fills the trench and covers the metal film, and separating the second epitaxial layer, the third epitaxial layer, and the structure layer from the first epitaxial layer.

Semiconductor device and method for manufacturing the same

Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.

Semiconductor devices including a nanowire and methods of manufacturing the same

The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.

Nitride electronic device and method for manufacturing the same

The inventive concept provides methods for manufacturing a semiconductor substrate. The method may include forming a stop pattern surrounding an edge of a substrate, forming a transition layer an entire top surface of the substrate except the stop pattern, and forming an epitaxial semiconductor layer on the transition layer and the stop pattern. The epitaxial semiconductor layer may not be grown from the stop pattern. That is, the epitaxial semiconductor layer may be isotropically grown from a top surface and a sidewall of the transition layer by a selective isotropic growth method, so that the epitaxial semiconductor layer may gradually cover the stop pattern.

Method for manufacturing semiconductor substrate

Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.

Self-pulsating laser diode

A full 3R (re-timing, re-shaping, re-amplifying) recovery system is provided. In the full 3R recovery system, a self-pulsating laser diode (SP-LD) and an electroabsorption modulator (EAM) are integrated and disposed on a semiconductor substrate.

3R recovery system

An electroabsorption (EA) duplexer in which an optical amplifier, a photodetector, and an optical modulator are monolithically integrated to obtain a high radio frequency (RF) gain in radio-over fiber (RoF) link optical transmission technology is provided. The EA duplexer includes a substrate, a separation area, an optical detection/modulation unit, and an optical amplification unit. The separation area includes a first epitaxial layer formed of at least one material layer on the substrate. The first epitaxial layer functions as a first optical waveguide. The optical detection/modulation unit includes a second epitaxial layer formed of at least one material layer on the first epitaxial layer to detect and modulate an optical signal. The second epitaxial layer functions as a second optical waveguide. The optical amplification unit includes the second optical waveguide and a third epitaxial layer formed of at least one material layer on the second epitaxial layer to amplify an optical signal. The third epitaxial layer functions as a third optical waveguide. The optical amplification unit is electrically separated from the optical detection/modulation unit by the separation area and is disposed on at least one side of the optical detection/modulation unit.

Electroabsorption duplexer

A distributed feedback (DFB) quantum dot semiconductor laser structure is provided. The DFB quantum dot semi-conductor laser structure includes: a first clad layer formed on a lower electrode; an optical waveguide (WG) formed on the first clad layer; a grating structure layer formed on the optical WG and including a plurality of periodically disposed gratings; a first separate confinement hetero (SCH) layer formed on the grating structure layer; an active layer formed on the first SCH layer and including at least a quantum dot; a second SCH layer formed on the active layer; a second clad layer formed on the second SCH layer; an ohmic layer formed on the second clad layer; and an upper electrode formed on the ohmic layer. Accordingly, an optical WG is disposed on the opposite side of the active layer from the grating structure layer, thereby increasing single optical mode efficiency. And, an asymmetric multi-electrode structure is used for applying current, thereby maximizing purity and efficiency of the single mode semiconductor laser structure.

Distributed feedback (DFB) quantum dot laser structure

Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.

Method of fabricating semiconductor optical device

A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics.

Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method of manufacturing the same, and VCSEL diode

Provided is an apparatus and method for simultaneous optical wavelength conversion and optical clock signal extraction using semiconductor optical amplifiers (SOAs). The apparatus includes: a wavelength converter receiving a pump beam having input information and a probe beam having a different wavelength from the pump beam, and outputting the pump beam with an overshoot shifted to a red wavelength and an undershoot shifted to a blue wavelength due to non-linear characteristics and self-phase modulation of semiconductor optical amplifiers (SOAs) and the probe beam delivered the input information from the pump beam; an optical divider dividing output paths of the probe beam to which the input information has been delivered and the pump beam having the overshoot and the undershoot; a converted-wavelength extractor filtering the probe beam received from the optical divider; and a clock data regenerator obtaining a pseudo return-to-zero (PRZ) signal from the pump beam received from the optical divider and extracting a clock signal from the PRZ signal. The apparatus and method can simultaneously perform wavelength conversion and optical clock signal extraction on an NRZ signal using an optical method, without converting the NRZ signal into an electrical signal.

Apparatus and method for wavelength conversion and clock signal extraction using semiconductor optical amplifiers

There are provided a bi-directional transceiver module and a method for driving the same. The bi-directional transceiver module includes a 1.3 &#x3bc;m Distributed Bragg Reflection Laser Diode (DBR LD) including an active layer which performs light-emission in response to a light at 1.3 &#x3bc;m and a DBR mirror formed near the active layer. The DBR mirror is formed to prevent an upstream signal emerging from the 1.3 &#x3bc;m DBR LD from being deleted by a PD. A monitoring PD and a PD for detecting an optical signal are integrated and mounted behind the DBR mirror using a butt-joint method. The 1.3 &#x3bc;m DBR LD, the monitoring PD, and the PD for detecting the optical signal are electrically isolated by insulated areas. To drive the bi-directional transceiver module, a forward bias (+) is applied to a p-electrode formed on the 1.3 &#x3bc;m DBR LD, a backward bias (&#x2212;) is applied to p-electrodes formed on the monitoring PD and the PD for detecting the optical signal, and a n-electrode as a common electrode is grounded.

Bidirectional transceiver and method for driving the same

Growing community of inventors

Daejeon, South Korea

Sung Bock Kim