Eo Technics Co., Ltd

Sung Beom Jung

Soo Young Kim

Doo Seok Lee

Jea Ho Moon

Jung Jin Seo

Sang Chul Choi

Chun Hoe Gu

Seung Kwan Choi

Sun Jung Kim

Sun Youp Lee

Jae Man Choi

A laser marking device includes a laser emission unit configured to emit a laser beam to a first surface of an object to be processed, and a pressing unit configured to press a second surface that is opposite to the first surface of the object to be processed to make the first surface of the object to be flat. The pressing unit includes a first pressing portion configured to press an edge area of the second surface in a contact manner, and at least one second pressing portion configured to press a middle area of the second surface in a non-contact manner to maintain a separation distance from the second surface within a certain distance.

Laser marking device and laser marking method

Provided is an apparatus and method for correcting a marking position, in which, by measuring and correcting a marking position by using a processing film for position correction, marking may be accurately performed on a position on a semiconductor chip during a marking operation, before a marking operation is performed on semiconductor chips provided on a wafer. The apparatus for correcting a marking position of a wafer includes a support configured to support a processing film for position correction, a laser head configured to emit a laser beam to the processing film for position correction to form a pattern, a vision camera configured to obtain pattern position information, a movable table configured to move the support in a horizontal direction, and a controller configured to compare and match the pattern position information and marking position information set in the laser head.

Marking position correcting apparatus and method

Disclosed is a wafer marking method using a laser for marking a wafer having processing tape attached thereto. The disclosed laser marking method comprises the steps of: penetrating a 532-nm wavelength laser beam through the processing tape attached to one side of the wafer; and performing marking on the one side of the wafer by moving the 532-nm wavelength laser beam at a predetermined velocity, wherein the 532-nm wavelength laser beam has a frequency of 8 kHz to 40 kHz, and an output power of 0.8 W to 2 W.

Wafer marking method

Disclosed is a method for marking, by using a laser marker, a plurality of wafer dice divided by a wafer dicing process. The disclosed marking method for wafer dice comprises the steps of: setting a plurality of scan regions having a mutually overlapping portion on a wafer including the wafer dice; scanning the scan regions of the wafer a plurality of times by using a line scan camera; collecting position information of each of wafer dice located in regions in which the scan regions do not overlap; collecting, through image synthesis, position information of each of wafer dice located in regions in which the scan regions overlap; and marking, by using the laser marker, each of all the wafer dice of which the position information has been collected.

Marking method for wafer dice

Growing community of inventors

Anyang-si, South Korea

Sung Beom Jung