Vanguard International Semiconductor Corporation

Veridicom, Inc.

Sunetra K Mendis

Alexander G Dickinson

Paul C Ross

Tzi-Hsiung Shu

Ross McPherson

John A Tyson

Effectively defect free images are obtained from CMOS image sensors through a two step method in which the addresses of bad pixels are recorded during sensor testing and stored in an on-chip directory. Then, during sensor readout, each pixel address is checked to determine if it represents that of a bad pixel. If this is determined to be the case, the bad pixel value is replaced by another value. This replacement value is generated from an average of the nearest-neighbors that are not defective. If testing is performed at the wafer level, said bad pixel and nearest neighbor data may be used to modify the final level wiring so that bad pixels are disconnected and replaced by their nearest neighbors.

Pixel defect correction in a CMOS active pixel image sensor

The invention provides a method and apparatus for reducing image lag in CMOS active pixel sensors at low light levels by controlling the reset level. By ensuring that the reset level is independent of the preceding signal level, the problem of image lag can be avoided. Always resetting a photodiode to a fixed voltage is a hard reset. The maximum signal swing is limited by the reset level and the column readout amplifier. If the column circuits are not modified, using hard reset can reduce the maximum signal swing. However in dark images only a portion of the full scale is used. Therefore the amplifier gain setting can be used to determine whether to use a hard reset or soft reset. This method and apparatus for using hard or soft reset dependent on signal level improves image quality at low light levels without compromising performance at high illumination.

Method and apparatus of controlling a pixel reset level for reducing an image lag in a CMOS sensor

Apparatus and methods for testing an active pixel sensor ensure that a signal proportional to the quantity of light energy impinging on the active pixel sensor is reliably and accurately captured and made available for further on processing the rest of the APS system circuitry. The apparatus and method determines the capacitance of a photo-conversion device of the active pixel sensor. The apparatus and method determines that an active pixel sensor is functioning correctly. The apparatus and method determines the performance of an active pixel sensor. Where the performance of the active pixel sensor is a measure of linearity of the active pixel sensor and a connected chain of circuitry that process the signal converted by the photo-conversion device of the active pixel sensor.

On-chip design-for-testing structure for CMOS APS (active pixel sensor) image sensor

The present invention relates to a fingerprint sensing device comprising a planar array of closely-spaced capacitive sense elements. When a finger is placed in close proximity to the sensing device, the capacitive sense elements measure a capacitance between the finger and a single capacitor plate in each sense element. This is accomplished by precharging each capacitor plate, and then using a known current source to remove a fixed amount of charge from each capacitor plate. The measured capacitance varies as a function of the distance between the capacitor plate and the finger surface. Thus, a capacitance measurement allows the distance between the capacitor plate and the finger surface to be determined. Distance measurements across the array of sense elements are combined to produce a representation of the pattern of ridges on the finger surface which comprise a fingerprint. After a fingerprint is acquired, the quality of the fingerprint is evaluated, and if necessary, a gain parameter for the sense elements is iteratively adjusted until a satisfactory fingerprint is acquired.

Capacitive fingerprint sensor with adjustable gain

An apparatus for detecting topographic variations on an object such as a finger includes an array of sensing elements disposed on a substrate which each have a parasitic capacitance. An insulating receiving surface is disposed over the array of sensing elements and is adapted to receive the object such that a sensing element and a portion of the object located thereabove creates a measurable change in capacitance with respect to the parasitic capacitance. An electronic circuit is coupled to the array of sensing elements for measuring the measurable change in capacitance.

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Palo Alto, CA, United States of America

Sunetra K Mendis