National Institute of Advanced Industrial Science and Technology

Japan Science and Technology Agency

Japan Science and Technology Corporation

Sundaresan Athinarayanan

Hidetaka Ihara, Legal Representative

Gen-ei Ihara, Legal Representative

Yoshiko Ihara, Legal Representative

Chiaki Ihara, Legal Representative

Hideyo Ihara, Legal Representative

Hideo Ihara

JiaCai Nie

Hideo Di Ihara

An oxide high temperature superconductor and method of making which includes a first buffer layer composed of CeOformed on a sapphire R (1, &#x2212;1, 0, 2) face substrate for reducing lattice mismatch between the sapphire R (1, &#x2212;1, 0, 2) face substrate and the oxide high temperature superconductor thin film, and a second buffer layer composed of such an oxide high temperature superconductor but in which Ba is substituted with Sr formed on the first buffer layer. The first buffer layer reduces the lattice mismatch between the sapphire R (1, &#x2212;1, 0, 2) face substrate and the oxide high temperature superconductor thin, the second buffer layer prevents an interfacial reaction with Ba, thereby permitting the epitaxial growth of an oxide high temperature superconductor thin film that excels in both crystallographic integrity and crystallographic orientation.

Oxide high-temperature superconductor and its production method

A method and an apparatus which permits making a composite oxide thin film excellent in crystallinity easily and at a low temperature, with the capability of controlling the basic unit cell structure as desired, and without the need for a post annealing, as well as a composite oxide thin film thereby, especially a Cu group high temperature superconducting thin film, are disclosed. A thin Cu group high temperature superconducting film, which is constituted of a charge supply block () and a superconducting block (), is formed on a substrate by alternately sputtering from a sputtering target having a composition of the charge supply block () and a sputtering target having a composition of the superconducting block () and repeating such an alternate sputtering operation a number of times needed for the film to reach a desired thickness. The first sputtering target for the charge supply block has a charge supply block composition in which Cu atoms are partly substituted with atoms of an element having a structure stabilizing effect.

Production method for composite oxide thin film and device therefor and composite oxide film produced thereby

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Tsukuba, Japan

Sundaresan Athinarayanan