Seagate Technology Incorporated

Micron Technology Incorporated

Sundararajan Sankaranarayanan

Erich Franz Haratsch

Abdelhakim Alhussien

Ludovic Danjean

Zhengang Chen

Yunxiang Wu

Eric N Lee

Xiangyu Tang

Ivana Djurdjevic

Raman Venkataramani

Hongmei Xie

Thuy Van Nguyen

Kishore Kumar Muchherla

Sivagnanam Parthasarathy

Akira Goda

Earl T Cohen

Patrick Robert Khayat

Mehmet Fatih Erden

Koichi Kawai

Yingquan Wu

Jeffrey S McNeil, Jr

Jeremy Binfet

Leonid Baryudin

David Scott Ebsen

Alex G Tang

Ying Huang

Chulbum Kim

AbdelHakim S Alhussien

Eric Nien-Heng Lee

Ara Patapoutian

William Michael Radich

Roberto Izzi

Zheng Wang

Dustin James Carter

Rishi Ahuja

Abdel-Hakim S Alhussien

Tyler L Betz

Abdel Hakim S Alhussien

Raman Venkataranmani

Massimo Zucchinali

Abdel Hakim Alhussien

Alex Ga Hing Tang

Ludovik Danjean

Systems and methods are disclosed including a processing device operatively coupled to memory device. The processing device perform operations comprising receiving, from a memory sub-system controller, a first read command and a second read command; determining that the memory device is in a suspended state; and responsive to determining that a first address range specified by the first read command does not overlap with a second address range specified by the second read command, issuing, to the memory device, the first read command and the second read command collectively.

Memory performance during program suspend protocol

A system can include a memory device and a processing device, operatively coupled with the memory device, to perform operations including reading a first copy of data stored in a first set of memory cells comprising a first memory cell, determining whether a threshold voltage of the first memory cell is within a first range of threshold voltages, responsive to determining that the threshold voltage of the first memory cell is within the first range of threshold voltages, reading a second copy of the data stored in a second set of memory cells comprising a second memory cell, determining whether a threshold voltage of the second memory cell is within a second range of threshold voltages, and responsive to determining that the threshold voltage of the second memory cell is outside the second range, using the second copy of the data.

Using duplicate data for improving error correction capability

A subset of blocks from a set of blocks of a memory device are identified based on a valid data count constraint. A first block from the subset of blocks is selected based on a valid data count of the first block. A second block from the subset of blocks is selected based on a data temperature of the second block. A comparison of the first block and the second block is performed in accordance with one or more comparison criterion. The first block or the second block is selected as a garbage collection source block based on the comparison. Garbage collection is performed at the garbage collection source block.

Controlling variation of valid data counts in garbage collection source blocks

A memory sub-system includes a memory sub-system controller comprising a plurality of controller channels, one or more memory devices, each of which comprises a respective plurality of memory dies, and a channel switch circuit coupled between the plurality of the controller channels and a plurality of memory channels of the one or more memory devices, where each memory channel corresponds to a respective one of the plurality of memory dies of one of the memory devices, the channel switch circuit comprising command processing logic configured to: receive, from the memory sub-system controller, a plurality of channel mappings, each of which identifies a particular one of the controller channels and a particular one of the memory channels, and route data from each controller channel to a respective one of the memory channels that is associated with the controller channel by a respective one of the channel mappings.

Accessing memory devices via switchable channels

Systems and methods are disclosed including a controller and a memory device comprising a first plane and a second plane where each plane is associated with a respective queue maintained by the controller. The local media controller is configured to perform operations comprising storing, in a first queue associated with the first plane, a first plurality of memory access commands; storing, in a second queue associated with the second plane, a second plurality of memory access commands; and processing the first plurality of memory access commands from the first queue and the second plurality of memory access commands from the second queue.

Memory performance using memory access command queues in memory devices

A memory device includes an interface to communicate with a host, an array of memory cells, and a controller. The controller is configured to access the array of memory cells in response to commands from the host. The controller is further configured to enter an idle time in response to no commands from the host with queue empty, receive a first command from the host, and exit the idle time in response receiving a second command from the host. The controller is further configured to for a plurality of idle times, generate a history indicating a length of each idle time. The controller is further configured to predict the length of a subsequent idle time based on the history.

Memory devices including idle time prediction

A second read command to read second data from an array of memory cells is detected. An initial voltage to be applied to at least one wordline coupled to at least a subset of the array of memory cells is caused prior to releasing a first data associated with a first read command stored in a page buffer. The initial voltage to increase to a target value is caused. The page buffer to sense the second data from a bitline coupled to a page of the subset of the array of memory cells is caused. The sensed second data out of the bitline into the page buffer is read responsive to determining that the first data has been released from the page buffer.

Second read initialization on latch-limited memory device

A memory device includes a first memory array, a second memory array, and a page cache circuit coupled to the first memory array and the second memory array. The page cache circuit includes at least one set of concurrent resources and at least one shared resource, wherein the at least one set of concurrent resources are asynchronously and concurrently accessible by the first memory array and the second memory array, and wherein the at least one shared resource is accessible in a time-multiplexed fashion by the first memory array and the second memory array.

Concurrent page cache resource access in a multi-plane memory device

A device includes an array of memory cells with a first word line coupled to at least a subset of the array of memory cells and control logic coupled to the first word line. The control logic to detect, within a queue, a first read command to read first data from a first page of the subset and a second read command to read second data from a second page of the subset. The control logic is further to cause a voltage applied to the first word line to move to a target value. The control logic is further to cause a page buffer to sense the first data from a first bit line coupled to the first page and to sense the second data from a second bit line coupled to the second page. The control logic is further to cause the first word line to be discharged.

Read-time overhead and power optimizations with command queues in memory device

Systems and methods are disclosed including a processing device operatively coupled to memory device. The processing device perform operations comprising receiving a memory access command; determining a physical address associated with the memory access command; determining a plane of a die on the memory device that is referenced by the physical address; inserting the memory access command into a queue associated with the plane; and processing the memory access command from the queue.

A system can include a memory device and a processing device, operatively coupled with the memory device, to perform operations including receiving data to be stored on the memory device, storing a first copy of the data in a first set of memory cells of the memory device, and storing a second copy of the data in a second set of memory cells of the memory device. The operations can also include reading the first copy of the data and determining whether a threshold voltage of a cell in the first set of memory cells is within an overlapping range of voltage distributions, and reading the second copy of the data and determining whether the threshold voltage of a cell in the second set of memory cells is within an overlapping range of voltage distributions. They can also include using the second copy of the data.

A local media controller of a first memory device receives a first number of cycles broadcasted by a second memory device via a bus connecting the first memory device and the second memory device. The local media controller initializes a counter associated with the first memory device. Responsive to determining that the value of the counter matches the first number of cycles, the local media controller transmits a status of the first memory device via the bus. Furthermore, responsive to determining that the status is ready, the local media controller sends, to a memory sub-system controller managing the first memory device, a status of a memory region of the first memory device.

Memory device status push within memory sub-system

Systems and methods are disclosed including a processing device operatively coupled to memory device. The processing device perform operations comprising receiving a sequence of read commands from a memory sub-system controller; retrieving first data by executing a first read command of the set of read commands; storing the first data in a first portion of a cache of the memory device; responsive to determining that the memory device is in a suspended state, determining whether a first address range specified by the first read command overlaps with a second address range specified by a second read command of the set of read commands; responsive to determining that the first address range does not overlap with the second address range, retrieving second data by executing the second read command and storing the second data in a second portion of the cache; transferring the first and second data to the controller.

A device includes an array of memory cells having a word line coupled to at least a subset of the array, a queue, and control logic. The control logic: detects a first read command to read first data from a first page of the subset; accesses a second read command in the queue, the second read command to read second data from a second page of the subset; causes a voltage applied to the word line to ramp up to an initial value; causes the voltage to move to a target value; directs a page buffer to sense the first data from a first bit line coupled to the first page of the subset; directs the page buffer to sense the second data from a second bit line coupled to the second page of the subset; and causes the word line to be discharged.

Growing community of inventors

Fremont, CA, United States of America

Sundararajan Sankaranarayanan