Samsung Electronics Co., Ltd.

Suncheul Kim

Donghyun Lee

Uihyoung Lee

Donghoon Han

Youngsang Lee

Yunchul Shin

An integrated circuit device includes a substrate including an active region defined by a device isolation layer, the substrate defining a gate trench extending across the active region, a gate dielectric layer conformally covering an inner surface of the gate trench, and a gate electrode filling the gate trench on the gate dielectric layer. The gate electrode is composed of crystal grains of a single metal, and a diagonal length of at least one of the crystal grains is greater than a height of the active region that is in contact with the gate electrode.

Integrated circuit device

Provided is a flow rate control method, including: supplying fluid from a valve to a first sensor; measuring, by the first sensor, a first temperature of the fluid, and heating the fluid; measuring, by a second sensor, a second temperature of the heated fluid, and determining, by a controller, a first flow rate of the fluid based on comparison between the first temperature and the second temperature; supplying the fluid to a chamber and supplying an ignition voltage to the chamber through a radio frequency (RF) power source; measuring, by a third sensor, the ignition voltage; comparing, by the controller, the ignition voltage and a reference voltage to determine a second flow rate of the fluid; and controlling a supply of the fluid from the valve based on at least one of the first flow rate and or the second flow rate.

Flow control method using plasma system

A contact forming method may include providing a semiconductor substrate including a silicon oxide film to an interior of a chamber, subjecting a surface of the silicon oxide film to plasma nitrification treatment, supplying a source gas including TiCland Honto the silicon oxide film subjected to the plasma nitrification treatment, and forming a barrier layer by igniting a plasma using the source gas.

Growing community of inventors

Hwaseong-si, South Korea

Suncheul Kim