Hitachi, Ltd.

Director-general of the Agency of Industrial Science and Technology

Sunao Matsubara

Yoshio Homma

Shigeo Moriyama

Shigeru Kobayashi

Masashi Yamamoto

Toshikazu Shimada

Susumu Tsuzuku

Eisuke Nishitani

Haruo Itoh

Hideaki Shimamura

Katsuhiko Yamaguchi

Yuji Yoneoka

Akira Okamoto

Yoshihiro Ishida

Hiroyuki Shida

Satosi Kisimoto

Ryousei Kawa-ai

Yukio Tanigaki

Tokio Kato

Nobuo Nakamura

Shin-ichi Muramatsu

Shinichi Muramatsu

The present invention relates to a polishing method using a grindstone comprising abrasive grains and a bonding resin for bonding the abrasive grains, as well as to a polishing apparatus to be used for the polishing method. By using a resin for bonding abrasive grains, it is possible to obtain a grindstone having a desired modulus of elasticity. With such a grindstone, the surface of a substrate having concave and convex portions can be rendered uniformly flat, irrespective of the size of the concave and convex portions. Further, by first polishing the substrate surface with a polishing tool of a small elastic modulus and thereafter polishing it with a polishing tool of a large elastic modulus, it is possible to obtain a polished surface of reduced damage. The method of the invention is effective in planarizing various substrate surfaces having concave and convex portions.

Polishing method and apparatus

The present invention relates to vacuum processing equipment for processing a wafer in a vacuum, and film coating or forming equipment and method for forming a film on a wafer wherein radiation measurement and temperature control of the wafer is carried out by using an infrared radiation thermometer. Based upon the radiation measurement, heating and/or cooling of the wafer during processing is carried out.

Vacuum processing device and film forming device and method using same

Vacuum processing equipment, film coating equipment and deposition method

A solar cell including at least a thin film formed of an amorphous silicon material and having p-type conductivity. The thin film comprises a multi-layer structure including at least one non-doped layer formed of a material of an amorphous silicon material and having a thickness of 10 to 300 .ANG. and at least one p-type doped amorphous silicon layer of a given thickness. The p-type doped amorphous silicon layer is stacked such that at least one face thereof is in contact with said at least one non-doped layer of amorphous silicon material so that the thin film of multi-layer structure exhibits in effect p-type conductivity.

Solar cell

A plurality of photovoltaic devices (e.g., solar cells) connect with each other and form a photo-electric conversion apparatus. The photovoltaic devices concerned are so connected with each other that when a given pattern of light is irradiated upon the photo-electric conversion apparatus concerned, the electrical output generated when the whole of it is irradiated is smaller than that generated when some parts of it are irradiated. Since an electronic system equipped with this apparatus as a power supply can be designed to work when the apparatus is irradiated with such a pattern of light that irradiates only a part of the apparatus, an electronic system having such an identifying faculty can be made easily. Further, an apparatus like this type may be made by connecting the elements of this apparatus in series or in reverse direction to form units, and by connecting this plurality of units in series and/or in parallel.

Photo-electronic conversion apparatus with light pattern discriminator

Growing community of inventors

Tokorazawa, Japan

Sunao Matsubara