Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Sunao Aya

Koji Kise

Hideki Yabe

Kenji Marumoto

Hiroshi Watanabe

Naruhisa Miura

Masayuki Imaizumi

Yuji Ebiike

Yukiyasu Nakao

Tomokatsu Watanabe

Hiroaki Sumitani

Shozo Shikama

Hideaki Yuki

Takashi Hifumi

Kaeko Kitamura

Akihiko Furukawa

Takaaki Murakami

Yoichiro Tarui

Shiro Hino

Shohei Yoshida

Shuhei Nakata

Yoshiyuki Nakaki

Masayoshi Tarutani

Yoshio Fujii

Tsuyoshi Kawakami

Toshikazu Tanioka

Kei Sasaki

Takahiro Nakatani

Keiko Sakai

Shigeto Ami

A vacuum is maintained inside a vacuum partition (). The whole of the solid packed container () is disposed inside the vacuum partition (). A heater () sublimates the aluminum chloride () packed in the solid packed container () to generate an aluminum chloride gas (). An arc chamber () ionizes the aluminum chloride gas () and emits an ion beam () of the ionized aluminum chloride gas (). A gas supply nozzle () leads the aluminum chloride gas () from the solid packed container () into the arc chamber (). A supporting part () supports and fixes the solid packed container () on the vacuum partition (). A thermal conductivity of the supporting part () is lower than thermal conductivities of the vacuum partition () and the solid packed container ().

Ion implantation apparatus

A method for manufacturing a semiconductor device includes a photolithography process having steps of a developing solution immersing process. The steps of the developing solution immersing process includes step (a) of dropping a developing solution on a silicon carbide semiconductor substrate and forming a developing solution film so as to have a film thickness of more than 6 &#x3bc;m and step (b) of reducing the film thickness of the developing solution film to 6 &#x3bc;m or less.

Method for manufacturing semiconductor device

A semiconductor device capable of suppressing time variation of a threshold voltage and a method of manufacturing the same. A semiconductor device according to the present invention comprises a drift layer formed on a semiconductor substrate, first well regions formed in a surface layer of the drift layer, being apart from one another, a gate insulating film formed, extending on the drift layer and each of the first well regions, a gate electrode selectively formed on the gate insulating film, a source contact hole penetrating through the gate insulating film and reaching the inside of each of the first well regions, and a residual compressive stress layer formed on at least a side surface of the source contact hole, in which a compressive stress remains.

Semiconductor device

A method for manufacturing a semiconductor device of the present invention includes steps of (a) preparing a silicon carbide substrate including a photoresist film formed on a principal surface, (b) dropping a first developing solution onto the photoresist film, (c) rotating the silicon carbide substrate to drain the first developing solution dropped onto the photoresist film after a lapse of a first development time since the end of the step (b), (d) dropping a second developing solution onto the photoresist film after the step (c), and (e) rotating the silicon carbide substrate to drain the second developing solution dropped onto the photoresist film after a lapse of a second development time since the end of the step (d).

A semiconductor device capable of suppressing generation of a high electric field and preventing a dielectric breakdown from occurring, and a method of manufacturing the same. The method of manufacturing a semiconductor device includes (a) preparing an n+ substrate to be a ground constituted by a silicon carbide semiconductor of a first conductivity type, (b) forming a recess structure surrounding an element region on the n+ substrate by using a resist pattern, and (d) forming a guard ring injection layer to be an impurity layer of a second conductivity type in a recess bottom surface and a recess side surface in the recess structure by impurity injection through the resist pattern, and a corner portion of the recess structure is covered with the impurity layer.

Method of manufacturing semiconductor device

A method of manufacturing a silicon carbide semiconductor device having a silicon carbide layer, the method including a step of implanting at least one of Al ions, B ions and Ga ions having an implantation concentration in a range not lower than 1E19 cmand not higher than 1E21 cmfrom a main surface of the silicon carbide layer toward the inside of the silicon carbide layer while maintaining the temperature of the silicon carbide layer at 175&#xb0; C. or higher, to form a p-type impurity layer; and forming a contact electrode whose back surface establishes ohmic contact with a front surface of the p-type impurity layer on the front surface of the p-type impurity layer.

Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the same

An X-ray absorber is deposited on a membrane. A stress adjust step is applied so that the average film stress of the X-ray absorber is 0. After patterning the X-ray absorber, the position accuracy of the pattern is measured. Then, a stress adjust process is applied to the patterned X-ray mask. Accordingly, a stress adjustment method is used to acquire an X-ray mask that has no pattern position offset of the X-ray absorber.

Stress adjustment method of X-ray mask

X-ray mask provided with an alignment mark and method of manufacturing the same

An X-ray mask including a transfer pattern having high accuracy is obtained. In a method of manufacturing the X-ray mask, an X-ray absorber film preventing transmission of an X-ray is formed on a substrate. A resist film is formed on the X-ray absorber film. The substrate is placed on a movable member. Steps of moving the movable member and irradiating the resist film with an energy beam are repeated for carrying out a drawing step of drawing a pattern on the resist film. Between the step of placing the substrate on the movable member and the drawing step, a step of holding a mask member including the resist film, the X-ray absorber film and the substrate to be in a state substantially identical to thermal equilibrium in the drawing step is carried out.

X-ray mask and method of manufacturing the same

The X-ray mask manufactured according to the present invention can solve a problem that the thin film stress of the X-ray absorber cannot be made to be zero although the mean thin film stress throughout the X-ray absorber can be made to be zero. The thin film stress distribution over the X-ray absorber 4 after the X-ray absorber 4 has been formed on a silicon substrate 1 is measured, and then inputs of electric power to heaters 9a, 9b and 9c of a hot plate 8 are changed so as to heat the X-ray absorber 4 to temperatures according to a specified temperature distribution with which the thin film stress throughout the X-ray absorber can be made to be zero.

Method of manufacturing X-ray mask and heating apparatus

A method of making a X-ray mask including: a step of forming a X-ray absorber above a substrate; a step of controlling a stress of the X-ray absorber by a predetermined condition; and wherein the predetermined condition for controlling the stress of the X-ray absorber formed above the substrate is determined by a measured value of a stress of a X-ray absorber formed on a monitor substrate.

Method of making X-ray mask having reduced stress

Growing community of inventors

Tokyo, Japan

Sunao Aya