Samsung Electronics Co., Ltd.

Sun-Yul Ahn

Tae-Sung Kim

Young-ho Kim

Kyong-Rim Kang

Jung-Hoon Lee

Young-Ho Kim

Jae-hyun Kim

Hyo-Jin Yun

Kyung-Woo Park

Song-se Yi

Ji-Man Park

Joo-Hyung Yang

A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.

Methods of forming a pattern using photoresist compositions

A polymer resin composition, a method for forming a pattern using the polymer resin composition, and a method for fabricating a capacitor using the polymer resin composition are disclosed. The polymer resin composition includes about 75 to 93 percent by weight of a copolymer prepared from benzyl methacrylate, methacrylic acid, and hydroxyethyl methacrylate; about 1 to 7 percent by weight of a cross-linking agent; about 0.01 to 0.5 percent by weight of a thermal acid generator; about 0.01 to 1 percent by weight of a photoacid generator; about 0.00001 to 0.001 percent by weight of an organic base; and a solvent.

Polymer resin composition, related method for forming a pattern, and related method for fabricating a capacitor

The invention is directed to particular polymer compositions that may be generally characterized by the formula: wherein the variables L, M and N represent the relative molar fractions of the monomers and satisfy the expressions 0&#x3c;L&#x2266;0.8; 0&#x3c;M&#x2266;0.2; 0&#x3c;L&#x2266;0.35; and L+M+N=1; and, wherein R, Rand Rare independently selected from C-Calkyls and derivatives thereof. The invention is also directed to polymer compositions that, when used to form a buffer layer or pattern, can be more easily removed from the surface of a semiconductor substrate, thereby increasing productivity and/or reducing the likelihood of defects and failures associated with residual photoresist material.

Copolymers, polymer resin composition for buffer layer method of forming a pattern using the same and method of manufacturing a capacitor using the same

The invention is directed to particular polymer compositions that may be generally characterized by the formula: wherein the variables L, M and N represent the relative molar fractions of the monomers and satisfy the expressions 0&#x3c;L&#x2266;0.8; 0&#x3c;M&#x2266;0.25; 0&#x3c;N&#x2266;0.35; and L+M+N=1; and, wherein R, Rand Rare independently selected from C-Calkyls and derivatives thereof. The invention is also directed to polymer compositions that, when used to form a buffer layer or pattern, can be more easily removed from the surface of a semiconductor substrate, thereby increasing productivity and/or reducing the likelihood of defects and failures associated with residual photoresist material.

Growing community of inventors

Anyang-si, South Korea

Sun-Yul Ahn