Triquint Technology Holding Co.

Other

Agere Systems Inc.

Agere Systems Guardian Corp.

Sun-Yuan Huang

William Crossley Dautremont-Smith

Si Hyung Cho

Charles H Joyner

Abdallah Ougazzaden

Ronald Eugene Leibenguth

Claude Lewis Reynolds, Jr

Kenneth L Bacher

The invention is a semiconductor optical device and method of fabrication where the device includes an active region with an active layer having a first index of refraction, and a blocking region having a second, lower index of refraction. A semiconductor layer having an index of refraction higher than the blocking region is formed over both the active and blocking regions so that the semiconductor layer is in closer proximity to the active layer in areas not covered by the blocking region so as to decrease the difference between the effective index of refraction in the active region and the effective refractive index of the blocking region. Such devices are particularly useful for pumping optical amplifiers since greater power can be achieved while maintaining single mode emission.

Method of manufacturing semiconductor optical devices

The present invention is directed to a large area single-mode (LASM) laser system that provides a laser having a wider gain region and thus a higher power output without introducing the second transverse mode into the optical signal. The laser system of the present invention also reduces the laser junction temperature, thereby improving the reliability of the laser and of laser systems constructed therefrom. The present invention also provides a stabilized spectrum in an optical signal by providing a means for feeding back from an external fiber grating to the laser only a single mode and a selective spectrum of an optical signal generated by the laser.

High-power and high efficiency large area single-mode laser

The invention is an optical apparatus and method of fabrication wherein an optical device such as a semiconductor laser includes a grating and a waveguide optically coupled to the grating. At least a portion of the waveguide coupled to the grating has a width which varies along the length of the waveguide in such a manner as to broaden the spectral line width of light output from the device. The width can be varied according to linear, sinusoidal or saw-tooth functions. A broadened line width permits pumping of a Raman amplifier at a high power without inducing any significant Brillouin Scattering.

Optical device with increased spectral width

A semiconductor laser having a single transverse mode operation. Optical power higher than that generated by conventional pump lasers is achieved by widening the gain medium without inducing the second transverse mode. This is accomplished by providing a small refractive index difference between active and blocking regions of the laser. The refractive index difference between the laser active region material and the laser blocking region material at the fundamental frequency is less than about 0.029.

High power single mode laser and method of fabrication

Growing community of inventors

Union City, CA, United States of America

Sun-Yuan Huang