Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Other

Samsung Displayco., Ltd.

Techno Semichem Co., Ltd.

Qmc Co., Ltd.

Sun-Young Hong

Bong-Kyun Kim

Jong-Hyun Choung

Hong-Sick Park

Byeong-Jin Lee

Won-Suk Shin

Nam-Seok Suh

Shi-Yul Kim

Chang-Oh Jeong

Byeong-Beom Kim

Jae-Hyoung Youn

Joo-Ae Youn

Yang-Ho Bae

Dong-Ju Yang

Jean-Ho Song

Doo-Hee Jung

Sam-Young Cho

Won-Guk Seo

Jang-Soo Kim

Yu-Gwang Jeong

Sang-Gab Kim

Ki-Won Kim

Woo-Geun Lee

Young-Wook Lee

Jong-in Kim

Sang-woo Kim

Shin-Il Choi

Baek Hee Lee

Jong-In Kim

Sung-Ryul Kim

Ki-beom Lee

Byung-Uk Kim

Pil-Sang Yun

Hwa-Yeul Oh

Young-Joo Choi

Hyun-Cheol Shin

Ki-Yeup Lee

O-Sung Seo

Je-Hyeong Park

Jong-Hyun Jeong

Suk-Il Yoon

Soon-Beom Huh

Hong-Long Ning

Kui-Jong Baek

Pil-Soon Hong

Tai-Hyung Rhee

Yong-Sung Song

Ji-Sun Lee

Sung-Gun Shin

Se-Hwan Jung

Doo-Young Jang

Jeong-Min Park

Je-Hun Lee

Do-Hyun Kim

Sang-Woo Kim

Wang Woo Lee

Eun-Guk Lee

Seung-yong Lee

O Sung Seo

Jean Ho Song

Seung-Jae Jung

Hwa Yeul Oh

Young-Chul Park

Hyun-Kyu Lee

Dong Hee Lee

Donghee Lee

Wang-Woo Lee

Joon-Woo Lee

Sang-Hoon Jang

Young-Jun Jin

Yang Ho Bae

Jongsoo Lee

Min-Ki Lim

Tae-Hyung Ihn

Beng So Ryu

Joo-Ae Yoon

Juho Kim

Hyun-cheol Shin

Seung-Jae Yang

Sun-Joo Park

Nam Seok Suh

Hong-Jin Jung

Byong-Shik Lee

Bum-Joong Kim

Hyeon-Sam Jang

Hark-Yong Kim

Jong-Ho Kwak

Young-Yong Kim

Do-Won Kim

Ki-Beom Lee

Byeoung-Jin Lee

Ky-Sub Kim

Oh-Hwan Kweon

Hyungjoo Kim

A composition for a light conversion layer includes: a base resin; quantum dots; and a thiol compound including at least one thiol group in a molecule.

Composition for light conversion layer, light conversion layer and electronic device including the same

A light unit according to an exemplary embodiment includes a light source and an optical member transmitting and converting light emitted from the light source, where the optical member includes a light guide, a low refractive index layer disposed on the light guide and having a smaller refractive index than that of the light guide, and a wavelength conversion layer disposed on the low refractive index layer and including quantum dots, and the low refractive index layer includes a metal.

Light unit and display device including the same

A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.

Thin film transistor substrate and the method thereof

An exemplary embodiment provides a thin film transistor array panel including: a substrate; a gate line; a semiconductor layer; a data wire layer; a first passivation layer; and a second passivation layer. The gate line is disposed on the substrate and includes a gate electrode. The semiconductor layer is disposed on the substrate. The data wire layer is configured to include a data line disposed on the substrate to cross the gate line, a source electrode connected to the data line, and a drain electrode disposed to face the source electrode. The first passivation layer is disposed on a channel region between the source electrode and the drain electrode. The second passivation layer is disposed on the first passivation layer, the source electrode, and the drain electrode. A width of the first passivation layer disposed on the channel region is equal to or smaller than a distance between the source electrode and the drain electrode.

Thin film transistor array panel and method of manufacturing the same

A method for manufacturing a thin film transistor array panel, including: sequentially forming a first silicon layer, a second silicon layer, a lower metal layer, and an upper metal layer on a gate insulating layer and a gate line; forming a first film pattern on the upper metal layer; forming a first lower metal pattern and a first upper metal pattern that includes a protrusion, by etching the upper metal layer and the lower metal layer; forming first and second silicon patterns by etching the first and second silicon layers; forming a second film pattern by ashing the first film pattern; forming a second upper metal pattern by etching the first upper metal pattern; forming a data line and a thin film transistor by etching the first lower metal pattern and the first and second silicon patterns; and forming a passivation layer and a pixel electrode on the resultant.

Method for manufacturing thin film transistor array panel

The present disclosure relates to laser processing and a laser processing apparatus for processing materials using laser. Processing performed after loading a wafer on a work stage and a laser processing apparatus for implementing such processing, among others, are disclosed. The laser processing includes loading a wafer on a work stage; determining the number of chips formed on the wafer loaded on the work stage, performing chip defect inspection and aligning the wafer while moving the work stage; measuring a height of a surface of the wafer loaded on the work stage using a displacement sensor; monitoring output power of a processing laser using a power meter; and shifting the work stage while irradiating a laser beam on the wafer to process the wafer.

Laser processing method and laser processing apparatus

Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.

Etchant for metal wiring and method for manufacturing metal wiring using the same

An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH)SO, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.

Etchant and method of manufacturing an array substrate using the same

An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water.

Etchant composition, patterning conductive layer and manufacturing flat panel, display device using the same

A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode connected to the gate line and formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate insulating layer which covers the gate line and the gate electrode, a semiconductor layer formed on the gate insulating layer to overlap the gate electrode, a data line which intersects the gate line, a source electrode connected to the data line to overlap a part of the semiconductor layer, and a drain electrode connected to the pixel electrode to overlap a part of the semiconductor layer.

Thin film transistor array and method of manufacturing the same

A display substrate includes an insulating substrate, a thin film transistor, a contact electrode, and a pixel electrode. The thin film transistor includes a control electrode, a semiconductor pattern, a first electrode, and a second electrode. The control electrode is on the insulating substrate. The semiconductor pattern is on the control electrode. The first electrode is on the semiconductor pattern. The second electrode is spaced apart from the first electrode on the semiconductor pattern. The contact electrode includes a contact portion and an undercut portion. The contact portion is electrically connected to the second electrode to partially expose the semiconductor pattern. The undercut portion is electrically connected to the contact portion to cover the semiconductor pattern. The pixel electrode is electrically connected to the second electrode through the contact portion of the contact electrode.

Display substrate, display device having the same and method of manufacturing the same

A composition for removing a photoresist includes a) an amine compound having a cyclic amine and/or a diamine, b) a glycol ether compound, c) a corrosion inhibitor and d) a polar solvent. The composition further includes a stripping promoter. Further disclosed is a method of manufacturing an array substrate using the composition for removing a photoresist.

Composition for removing photoresist and method of manufacturing an array substrate using the same

Growing community of inventors

Yongin-si, South Korea

Sun-Young Hong