Egtm Co., Ltd.

Skhynix Inc.

Sun Young Baik

Sung Jun Ji

Tae Young Lee

Shin Beom Kim

Sang Hyun Lee

Ha Na Kim

Dong Kyun Lee

Woong Jin Choi

Ju Hwan Jeong

Hyeon Sik Cho

Tae Hwan Lim

Kyu Ho Cho

Myeong Il Kim

Jang Keun Sim

Su Pill Chun

Han Bin Lee

Provided is a method for areal selective forming of a thin film according to an exemplary embodiment of the present disclosure including: a substrate preparation step of supplying and stabilizing a substrate including a growth area and a non-growth area into a chamber; a precursor supply step of supplying a metal precursor compound into the chamber and adsorbing the metal precursor compound to the substrate; a purge step of purging the inside of the chamber; and a thin film formation step of supplying a reaction material into the chamber to react with the metal precursor compound and form a thin film, in which the metal precursor compound is a Group 5 metal precursor compound represented by Chemical Formula 1 below:

Method for areal selective forming of thin film

The present specification provides an organic group 4 metal precursor compound and a method for forming a thin film using the same.

Organometallic precursor compound

According to the embodiment of the present disclosure, an organo tin compound is represented by the following Chemical Formula 1:

Organo tin compound for thin film deposition and method for forming tin-containing thin film using same

According to an embodiment of the present disclosure, a niobium precursor compound is represented by Chemical Formula 1 or Chemical Formula 2 below: Therefore, the niobium precursor compound according to an embodiment of the present disclosure has excellent thermal stability, exists in a liquid state at room temperature, and has high volatility, thereby having an advantage which is advantageous for application to a thin film forming process. Further, the niobium thin film formed using the niobium precursor compound according to an embodiment of the present disclosure has a small residual content and has uniform physical properties.

Niobium precursor compound for thin film deposition and method for forming niobium-containing thin film using same

A group 5 metal compound according to an embodiment of the present disclosure is represented by any one of the following &#x3c;Chemical Formula 1&#x3e; and &#x3c;Chemical Formula 2&#x3e;:  In &#x3c;Chemical Formula 1&#x3e; and &#x3c;Chemical Formula 2&#x3e;,

Group 5 metal compound for thin film deposition and method of forming group 5 metal-containing thin film using same

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Incheon, South Korea

Sun Young Baik