Samsung Electronics Co., Ltd.

Woongjin Coway Co., Ltd

Coway Co., Ltd

Toray Advanced Materials Korea Inc.

Sun-Yong Lee

Youn-Kook Kim

Doo-Won Han

Sang-rok Hah

Seung-chul Kim

Je-Kang Yoo

Hyoung-Jun Ahn

Won-bae Jang

Chan-seung Choi

Min-suk Kim

Chee-wan Kim

Young-Ho Lee

Young-Chul Jang

Sang-Hyeon Kang

Soo-Woong Lee

Hae-Sun Lee

Sung-Han Yun

Hee-Sun Chae

Hyo-Seok Choi

Jae-Hyung Jung

Kun-Hyung Lee

Hyun-Ho Cho

Tae-Hoon Park

Dong-Gyu Kim

Sung-Kon Cho

Dong-Heui Jang

Doo-Heun Baek

Moo-Kyung Moon

Eu-Jean Moon

Suk-Young Lee

Hee-Kyung Lee

Jae-Hoon Moon

Jong-Kwan Kim

Kang-Jin Kim

Gi-Lyang Kim

In-Tak Lee

Hyoung Jun Ahn

Doo Won Han

A reverse osmosis filtering module includes: a purified water discharge pipe in which a purified water discharge path is formed, and which has a communication hole that is formed on an outer periphery thereof and communicates with the purified water discharge path; a reverse osmosis filtering part including a reverse osmosis filtering member in which a purified water flow space is formed, and which is wound around the purified water discharge pipe such that the purified water flow space communicates with the communication hole; a first flow channel formation cap provided at one side and having an inlet hole; and a second flow channel formation cap provided at the other side of the reverse osmosis filtering part and having an outlet hole.

Reverse osmosis filtering module and reverse osmosis filter comprising same

Disclosed herein is a spiral wound type filter cartridge and more specifically, a spiral wound type filter cartridge in which activated carbon fiber is provided. The inside of spiral wound type filter cartridge is capable of serving as a carbon filter in a water purifier, thus eliminating the necessity of the use of any carbon filter for pre- or post-treatment in the process of purifying raw water, reducing an overall size of the water purifier and considerably reducing costs associated therewith.

Spiral wound type filter cartridge

Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.

Semiconductor process evaluation methods including variable ion implanting conditions

An amine aqueous solution for forming an active layer of a polyamide reverse osmosis composite membrane is prepared, which consists of 0.1 through 20 weight % of polyfunctional aromatic amine monomer, 0.1 through 20 weight % of multi-functional tertiary alcohol amine, 0.1 through 20 weight % of strong acid, and 40 through 99.7 weight % of water.

Polyamide reverse osmosis composite membrane and preparation method thereof

A preparation method of a polyamide thin film composite reverse osmosis membrane and a polyamide thin film composite reverse osmosis membrane prepared using the preparation method are provided. The preparation method of a polyamide thin film composite reverse osmosis membrane using interfacial polymerization of an amine aqueous solution and amine-reactive compound includes the steps of (a) forming an active layer through interfacial polymerization by contacting a surface of a porous support with an amine aqueous solution containing a polyfunctional aromatic amine monomer and an organic solution containing polyfunctional acyl halide monomer as an amine-reactive compound, and (b) performing post-treatment preceded by the forming of the active layer by contacting the active layer with an aqueous solution containing 0.1 to 100 wt % of polyfunctional tertiary alcohol amine. The polyamide thin film composite reverse osmosis membrane prepared by using the polyfunctional tertiary alcohol amine as a post-treatment compound has improved water permeability and salt rejection compared to a case of using various post-treatment agents or methods.

Preparation method of polyamide thin film composite reverse osmosis membrane and polyamide thin film composite reverse osmosis membrane prepared therefrom

A method of manufacturing an electronic device, which can obtain sufficient manufacturing margins and reduce a defect rate by compensating for a threshold voltage variation caused by the variation of a critical dimension (CD) of a gate electrode. An ion implanter controller and an ion implantation system perform the method. In the method, an ion implantation recipe for forming a junction contact plug of a transistor formed on the wafer is adjusted based on the measured CD. Then, ions are implanted into the wafer by using the adjusted ion implantation recipe. All defects that may occur in the transistor during previous manufacturing steps can be repaired after the transistor is formed, thus enhancing manufacturing margins.

Method of manufacturing electronic device capable of controlling threshold voltage and ion implanter controller and system that perform the method

An apparatus and method for manufacturing semiconductor devices are disclosed. In accordance with the invention, a wafer transfer device for transferring wafers from wafer storage containers to wafer processing equipment includes a flow chamber designed to reduce the amount of contaminants that can enter the wafer container. The wafer transfer apparatus provide two gas inlets for allowing two gases to flow through the flow chamber of the transfer apparatus. This results in a reduced amount of contaminants able to enter the wafer container, which in turn results in manufacture of devices with more reliable performance characteristics as well as high manufacturing yield.

Apparatus and method for processing wafers

A method for manufacturing a semiconductor device comprises the steps of extracting an optimal working condition by accumulatively averaging accumulated working conditions of lots previously performed in an expectation process to be currently performed in the manufacturing equipment, extracting a correction condition by extracting information for an alignment state of a lower layer performed by the expectation process, and setting the working condition by adding the correction condition to the optimal working condition.

Method for manufacturing semiconductor device

Growing community of inventors

Seoul, South Korea

Sun-Yong Lee