Samsung Electronics Co., Ltd.

Sun-wook Kim

Seung-hun Lee

Jeong-yun Lee

Hyun-jung Lee

Sun-ghil Lee

Jung-han Lee

Myung-il Kang

Sang-Su Kim

Geum-jong Bae

Jung-Gil Yang

Seung-Min Song

Soo-jin Jeong

An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

Integrated circuit device and method of manufacturing the same

A semiconductor device includes: a fin-type active area extending in a first direction protruding from a substrate; a plurality of nanosheet stacked structures; a blocking film covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures; a gate electrode extending in a second direction intersecting the first direction on the fin-type active area, the gate electrode including a real gate electrode surrounding the plurality of nanosheets and a dummy gate electrode disposed on the blocking film; and a gate dielectric layer between the real gate electrode and the plurality of nanosheets and between the dummy gate electrode and the blocking film.

Semiconductor devices

Growing community of inventors

Seongnam-si, South Korea

Sun-wook Kim