Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Sun Woo Park

Chun-Gi You

Jong-Hyun Park

Yul-Kyu Lee

Soo-Hyun Kim

Ji Min Lee

Dong-Ki Lee

Cheol-Ho Park

Hisanori Ihara

Sun Kwon Kim

Jong Sung Lee

Chang Keun Lee

Nam Il Koo

Eung Kyu Lee

Ho Woo Park

Sun Hyun Kim

Jeong Ho Moon

Hee-Sang Park

Kyung Rim Kim

A semiconductor device includes a lower insulating layer on a lower substrate, a lower pad structure inside the lower insulating layer, an upper insulating layer on the lower insulating layer, an upper pad structure inside the upper insulating layer, and an upper substrate on the upper insulating layer. A via plug passes through at least a portion of each of the upper substrate, the upper insulating layer, and the lower insulating layer, and in contact with the upper pad structure and the lower pad structure. The upper pad structure includes upper pad conductive layers and an upper connection layer between the upper pad conductive layers. The upper connection layer includes a conductive pattern having a shape different from a shape of at least one of the upper pad conductive layers. The via plug is in direct contact with the upper pad conductive layers and the upper connection layer.

Semiconductor device including via plug

A photocurable coating composition includes 50 to 150 parts by weight of a urethane acrylate oligomer having a number average molecular weight of 1300 to 1700 g/mol and 9 functional groups, 50 to 150 parts by weight of an acrylate monomer, 10 to 15 parts by weight of a photoinitiator, and 1 to 3 parts by weight of a surfactant.

Photocurable coating composition, method of forming coating layer using the same, and apparatus for forming coating layer using the same

An organic light emitting diode display including a substrate; a light blocking layer disposed on the substrate and having a semiconductor opening; a first semiconductor pattern disposed in the semiconductor opening; a gate insulating layer disposed on the light blocking layer and the first semiconductor pattern; a first gate electrode disposed on the gate insulating layer; a first source electrode electrically connected to the first semiconductor pattern; a first drain electrode spaced apart from the first source electrode; a protective insulating layer disposed on the first source electrode and the first drain electrode, the protective insulating layer having a contact portion; a pixel electrode disposed on the protective insulating layer contacting the first drain electrode through the contact portion; an emitting layer disposed on the pixel electrode; and a common electrode disposed on the emitting layer.

Organic light emitting diode display and method of manufacturing the same

The present invention relates to an organic light emitting device and a manufacturing method thereof. A method of manufacturing an organic light emitting device according to an exemplary embodiment of the present invention includes: respectively forming first, second, and third driving transistors in a first region, a second region, and a third region on a substrate; forming an insulating layer on the first to third driving transistors; respectively forming first, second, and third pixel electrodes on the insulating layer, the first, second, and third pixel electrodes being formed in the first, second, and third regions, respectively; forming an auxiliary electrode on a side surface of each of the first, second, and third pixel electrodes; forming an organic light emitting member on the first to third pixel electrodes; and forming a common electrode on the organic light emitting member.

Organic light emitting device and manufacturing method thereof

Disclosed is an organic light emitting display. In the organic light emitting display, a substrate is divided into a display region, in which an image is displayed, and a non-display region surrounding the display region. The organic light emitting display includes a plurality of pixels provided on the display region. At least one thin film transistor is formed on the non-display region. The display region includes a first electrode connected to the thin film transistor, an organic light emitting layer formed on the first electrode, and a second electrode formed on the organic light emitting layer to apply voltage to the organic light emitting layer with the first electrode. A light blocking layer having an opening formed below the semiconductor layer is formed on the non-display region.

Organic light emitting display and fabrication method of the same

An organic light emitting display includes a first substrate having a plurality of pixel areas, a driving transistor disposed on the first substrate, an organic layer disposed on the driving transistor, a first electrode disposed on the organic layer and electrically connected to the driving transistor, an insulating layer pattern disposed on the organic layer, the insulating layer pattern having a first opening corresponding to each pixel area, a bank pattern disposed on the insulating layer pattern, the bank pattern having a second opening corresponding to the first opening, an organic light emitting layer disposed in the first and second openings, and a second electrode disposed on the organic light emitting layer.

Organic light emitting display and method of manufacturing the same

Growing community of inventors

Hwaseong-si, South Korea

Sun Woo Park