Lg Innotek Co., Ltd.

Upd Corporation

Sk Telecom Company, Ltd.

Yonsei University

Catholic University Industry Academic Cooperation Foundation

Sun Woo Park

Sang Youl Lee

Ji Hyung Moon

Chung Song Kim

June O Song

Young Min Cho

Tae Geun Bong

Hyeon Min Cho

Kwang Ki Choi

Dong Hyun Sung

Dae Hee Lee

Jae Cheon Han

Tae-Hoon Park

Sang Hoon Seo

Byoung Woo Lee

Jong Min Cheong

Sang-Hoon Seo

Young Ho Kim

Sung Min Hwang

Yong Tae Moon

Sung Won Kim

Sung Jae Hwang

Jung Yoon Kim

Myung Sub Kim

Jung Yeon Lim

Chang Hyeong Lee

Seung Ki Kwok

Jae Sung Lim

Jin-Ick Lee

In-Hong Lee

Myung Ho Han

Kyung Soo Jeong

Taehoon Park

Jong Sang Son

Jong-Min Cheong

Je Seong Ryu

Jaeseon Lee

Tae Gue Kim

Tae-Gue Kim

Min Hyeon Lee

The present invention relates to a pharmaceutical composition for preventing or treating rheumatoid arthritis, and a stem cell therapeutic agent for treating rheumatoid arthritis, comprising nasal inferior turbinate-derived mesenchymal stem cells as an active ingredient. Nasal inferior turbinate-derived mesenchymal stem cells of the present invention have the effects of reducing the production of interleukin-17A (IL-17A), tumor necrosis factor-&#x3b1; (TNF-&#x3b1;), immunoglobulin G2 (IgG2a) which is an inflammation-inducing factor, and/or the proliferative ability of lymph node T cells, increasing interleukin-10 (IL-10) and/or regulatory T-cells (Treg, CD4CD25foxp3cell) that contribute to immune tolerance in spleen cells, and inhibiting the proliferation of human T-cells. The nasal inferior turbinate-derived mesenchymal stem cells have a safer acquisition process than existing mesenchymal stem cells and can be acquired in sufficient amounts within a desired period of time, thus allowing mesenchymal stem cells to be acquired at low cost and high efficiency. Moreover, since the nasal inferior turbinate-derived mesenchymal stem cells have the same genetic origin as individuals administered therewith there are few side effects, the nasal inferior turbinate-derived mesenchymal stem cells can be usefully used for preventing or treating in individually tailored immunocompatible rheumatoid arthritis.

Pharmaceutical composition for preventing or treating rheumatoid arthritis comprising nasal inferior turbinate-derived mesenchymal stem cells as an active ingredient

Disclosed is a semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The semiconductor structure includes a first upper surface on which the first semiconductor layer is exposed, a second upper surface on which the second semiconductor layer is disposed, an inclined surface connecting the first upper surface and the second upper surface, and a recess formed between the first upper surface and the inclined surface. The recess has a depth less than or equal to 30% of a vertical distance between the first upper surface and the second upper surface.

Semiconductor device

Disclosed herein is a semiconductor device including a light emitting structure including a first conductive type semiconductor layer, a plurality of active layers disposed to be spaced apart on the first conductive type semiconductor layer, and a plurality of second conductive type semiconductor layers disposed on the plurality of active layers, respectively, a first electrode electrically connected to the first conductive type semiconductor layer, and a plurality of second electrodes electrically connected to the plurality of second conductive type semiconductor layers, respectively, wherein the plurality of active layers include a first active layer, a second active layer, and a third active layer, the light emitting structure includes a first light emitter including the first active layer, a second light emitter including the second active layer, and a third light emitter including the third active layer, the first active layer emits light in a blue wavelength band, the second active layer emits light in a green wavelength band, and a height of the second active layer differs from a height of the first active layer.

Semiconductor device and display device including the same

Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.

Semiconductor module and display device including same

The embodiments of the present invention relate to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package, and a lighting device. A light emitting device according to an embodiment has: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a passivation layer disposed on the light emitting structure; and an insulating reflective layer disposed on the passivation layer. The passivation layer may include a first region disposed on an upper surface of the light emitting structure, and a second region disposed on side surfaces of the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer. The insulating reflective layer may be disposed on the first region, and an end portion of the insulating reflective layer may be disposed apart from an end portion of the first region.

Light emitting device including a passivation layer on a light emitting structure

One embodiment discloses a semiconductor device comprising: a plurality of light-emitting units; a plurality of wavelength conversion layers each disposed on the plurality of light-emitting units; partitions disposed between the plurality of light-emitting units and between the plurality of wavelength conversion layers; a plurality of color filters each disposed on the plurality of wavelength conversion layers; and black matrix disposed between the plurality of color filters.

Semiconductor device and display device comprising same

An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S

Display device manufacturing method

Disclosed according to one embodiment is a light-emitting element comprising: a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second conductive layer electrically connected to the second semiconductor layer; a first conductive layer which is disposed in a plurality of via holes passing through the light-emitting structure and second conductive layer and comprises a plurality of through electrodes electrically connected to the first semiconductor layer; an insulation layer for electrically insulating the plurality of through electrodes from the active layer, second semiconductor layer, and second conductive layer; and an electrode pad disposed in an exposed area of the second conductive layer, wherein the farther away the second conductive layer disposed between the plurality of through electrodes is from the electrode pad, the greater the width of the second conductive layer becomes.

Light-emitting element

A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.

A thin film transistor substrate according to an embodiment comprises: a support substrate; a bonding layer disposed on the support substrate; a thin film transistor disposed on the bonding layer, wherein the thin film transistor includes a channel layer containing a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed below the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode; and a pixel electrode disposed on the thin film transistor and electrically connected to the drain electrode of the thin film transistor. The thin film transistor substrate according to the embodiment, and a display panel and a display device including the same have an advantage of implementing high resolution and reproducing a soft moving image by providing a high carrier mobility.

Thin film transistor substrate, and display panel and display device including same

The semiconductor element according to an embodiment comprises: a light-emitting structure comprising a p-type semiconductor layer, an active layer disposed under the p-type semiconductor layer, and an n-type semiconductor layer disposed under the active layer; a protective layer disposed on the side surface and upper surface of the light-emitting structure; a p-type contact layer disposed over the p-type semiconductor layer; and an n-type contact layer disposed under the n-type semiconductor layer, wherein: the width of the lower surface of the n-type semiconductor layer is provided greater than that of the lower surface of the p-type semiconductor layer; the width of the upper surface of the n-type contact layer is provided greater than that of the upper surface of the n-type semiconductor layer; and the angle between the lower surface of the n-type semiconductor layer and the side surface of the light-emitting structure may be 30-80 degrees.

Semiconductor device, display panel, and method for manufacturing display panel

A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.

A light emitting element disclosed in an embodiment comprises: a support substrate having a plurality of pads and a black matrix layer outside the plurality of pads; a plurality of light emitting chips, at least one of which is disposed on at least one of the plurality of pads; and a light-transmitting resin layer which is disposed on the support substrate and covers the pads, the black matrix layer, and the light emitting chips.

Light emitting device and display device having same

Disclosed according to one embodiment is a light-emitting element comprising: a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second conductive layer electrically connected to the second semiconductor layer; a first conductive layer comprising a plurality of through electrodes electrically connected to the first semiconductor layer through the second conductive layer and the light-emitting structure; an insulation layer for electrically insulating the plurality of through electrodes from the active layer, the second semiconductor layer, and the second conductive layer; and an electrode pad disposed in an exposed area of the second conductive layer, wherein the plurality of through electrodes differ in the area of a first region electrically connected to the first semiconductor layer.

A robotic gait training system includes a femoral support unit supporting a thigh of a patient, a hip joint support unit supporting buttocks of the patient, a lower leg support unit supporting a lower leg, an ankle support unit supporting an ankle, a support fixing toe tip positioned at an ankle height of the patient in use, a toe tip pad supporting and wrapping a forefoot of the patient, a tilt sensor, a first linear actuator operation unit rotating the femoral support unit based on the hip joint unit, a second linear actuator operation unit rotating the lower leg supporting unit based on the femoral support unit, a control unit generating a functional electric stimulation (FES) control signal, and an FES unit stimulating the plantarflexor or dorsiflexor of ankle joint based on the FES control signal received from the control unit.

Growing community of inventors

Seoul, South Korea

Sun Woo Park