Samsung Electronics Co., Ltd.

Lsis Co., Ltd.

Sun-Woo Lee

Young-Moon Choi

Hong-Sik Yoon

In-Seok Yeo

Ji-Young Kim

Dong-Woo Kim

Seong-Ho Moon

Jung-Hyeon Kim

Jang-Eun Heo

Kyung-rae Byun

Subramanya Mayya

Xiaofeng Wang

Subramanya Mayya Kolake

Disclosed herein is an apparatus for controlling an inverter. The apparatus controls a braking resistor connected in parallel with a DC link capacitor to switch to an ON or OFF state based on at least one of the temperature and the DC link voltage of the braking resistor.

Apparatus for controlling inverter

Disclosed are embodiments of an apparatus for correcting an offset of a current sensor. The apparatus includes an inverter, a detector, and a RMS calculator, and a controller. The RMS calculator converts the high frequency component extracted from the filter into an effective (RMS) value. The controller, if the effective (RMS) value of the d-axis or q-axis current transformed by the RMS calculator is larger than a preset reference, increases/decreases a currently-set DC offset of each of the current sensors by a certain amount, and replaces the currently-set DC offsets with a DC offset corresponding to a smallest one of the effective (RMS) values of the d-axis or q-axis transformed by the RMS calculator, thereby correcting each of the current sensors. Accordingly, a pulsation in an output torque in controlling an electric motor can be effectively prevented.

Apparatus for correcting offset of current sensor

In a memory device having a carbon nanotube and a method of manufacturing the same, the memory device includes a lower electrode, an upper electrode having a first void exposing a sidewall of a diode therein, an insulating interlayer pattern having a second void exposing a portion of the lower electrode between the lower electrode and the upper electrode, and a carbon nanotube wiring capable of being electrically connected with the diode of the upper electrode by a voltage applied to the lower electrode. The memory device may reduce generation of a leakage current in a cross-bar memory.

Memory devices having a carbon nanotube

In a method of forming carbon nano-tubes, a catalytic film is formed on a substrate. The catalytic film is then transformed into preliminary catalytic particles. Thereafter, the preliminary catalytic particles are transformed into catalytic particles. Carbon nano-tubes then grow from the catalytic particles. The carbon nano-tubes have relatively high conductivity and high number density.

Method of forming a carbon nano-tube

A device includes an insulating layer on a substrate having a lower conductive pattern, the insulating layer having a contact hole that penetrates the insulating layer and exposes a portion of the lower conductive pattern, a catalytic pattern having a first portion on the exposed portion of the lower conductive pattern and a second portion on a sidewall of the contact hole, a spacer on the sidewall of the contact hole, wherein the second portion of the catalytic pattern is disposed between the spacer and the sidewall, and a contact plug in the contact hole and contacting the catalytic pattern, the contact plug being a carbon nanotube material.

Device including contact structure and method of forming the same

In a method of forming a wiring having a carbon nanotube, a lower wiring is formed on a substrate, and a catalyst layer is formed on the lower wiring. An insulating interlayer is formed on the substrate to cover the catalyst layer, and an opening is formed through the insulating interlayer to expose an upper face of the catalyst layer. A carbon nanotube wiring is formed in the opening, and an upper wiring is formed on the carbon nanotube wiring and the insulating interlayer to be electrically connected to the carbon nanotube wiring. A thermal stress is generated between the carbon nanotube wiring and the upper wiring to produce a dielectric breakdown of a native oxide layer formed on a surface of the carbon nanotube wiring. A wiring having a reduced electrical resistance between the carbon nanotube wiring and the upper wiring may be obtained.

Method of forming a wiring having carbon nanotube

Provided are a semiconductor device and a method of manufacturing the semiconductor device, for example, a semiconductor device using carbon nanotubes or nanowires as lower electrodes of a capacitor, and a method of manufacturing the semiconductor device. The semiconductor device may include a lower electrode including a plurality of tubes or wires on a semiconductor substrate, a dielectric layer on the surface of the lower electrode, and an upper electrode on the surface of the dielectric layer, wherein the plurality of tubes or wires radiate outwardly from each other centering on the lower portion of the plurality of tubes or wires. Thus, the off current of the capacitor may be increased by increasing the surface area of the lower electrodes of the capacitor.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a substrate, an insulating layer having an opening, the opening exposing a portion of the substrate, a hydrophobic layer covering substantially only a sidewall and a top surface of the insulating layer, and a nanoscale conductive structure on the exposed portion of the substrate.

Semiconductor device having a nanoscale conductive structure

An embodiment includes a transistor and a method of manufacturing the transistor that includes carbon nano-tubes. The physical behavior of the carbon nano-tubes, particularly a bending action that alters a normally linear configuration, is affected by elements of the transistor, such as a space between the carbon nano-tube and a conductor. The space is formed by removing a spacer. A dimension of the spacer between the carbon nano-tube and the conductor is efficiently controlled by adjusting its width. An operation voltage of the transistor relates to the physical behavior of the carbon nano-tubes, and thus to the dimensions of the spacer.

Transistor and its method of manufacture

An integrated circuit capacitor includes first and second electrodes and at least one dielectric layer extending between the first and second electrodes. The first electrode includes at least one carbon nanotube. The capacitor further includes an electrically conductive catalyst material. This catalyst material may be selected from the group consisting of iron, nickel and cobalt and alloys thereof.

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Incheon, South Korea

Sun-Woo Lee