Samsung Electronics Co., Ltd.

Sun Woo-Jung

Kwang-Jin Lee

Beak-Hyung Cho

Jae-Yun Lee

Dong-Hoon Jeong

A nonvolatile memory device utilizes a variable resistive element. The nonvolatile memory device includes a plurality of banks and first to third write global bit lines arranged to cross the plurality of banks. Each of the plurality of banks includes a plurality of nonvolatile memory cells using resistive material. The first, the second and the third write global bit lines are disposed directly adjacent to one another in order. When a write current is supplied to the first write global bit line during a write period, a fixed voltage is applied to the second write global bit line while the third global bit line floats.

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Seoul, South Korea

Sun Woo-Jung